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DMG1012T-7 Transistors - FETs, MOSFETs - Single by Diodes Incorporated

DMG1012T-7 is a Transistors - FETs, MOSFETs - Single model from Diodes Incorporated, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to SOT-523 under the Diodes Incorporated brand listing. MOSFET N-CH 20V 630MA SOT-523. TrustCompo combines the available model, brand, hierarchy, and specification details around DMG1012T-7 so buyers can move faster from review to quotation.

RoHS
Datasheet
DMG1012T-7 Transistors - FETs, MOSFETs - Single by Diodes Incorporated | TrustCompo
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Part Number

DMG1012T-7

Internal code

TCE000120335

Package

SOT-523

Key specifications

Series

-

Min Quantity

1

Description

MOSFET N-CH 20V 630MA SOT-523

key Attributes

-

Technical document

Open The Official Datasheet

Review the latest datasheet for DMG1012T-7 from Diodes Incorporated in a separate tab so engineers and buyers can check package, electrical characteristics, and application details without leaving this product page.

View DMG1012T-7 Datasheet

Why request a quote

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RoHS, REACH, and lead-free documentation can be confirmed during RFQ
Traceability and Certificate of Conformance support available on request
Pre-shipment inspection report support for quality review

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Globally recognized certifications

4 certifications

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ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

Ordering workflow

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How to order this product

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1

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2

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3

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Structured product content

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Product overview

Overview

The DMG1012T-7 is a part manufactured by Diodes Incorporated. It is a P-channel enhancement mode MOSFET transistor. Here are some key features and applications:

Key Features:

  • P-channel MOSFET
  • Enhancement mode (normally-off)
  • Low on-resistance: RDS(ON) = 0.085 ohms (max) at VGS = -4.5V
  • Low gate threshold voltage: VGS(th) = -1.0V to -2.5V

Applications:

  • Power management in battery-powered devices
  • Load switching
  • DC-DC converters
  • Power supply circuits

Fast scan

Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Min Operating Temperature

-55°C

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Min Operating Temperature
-55°C
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Published
2012
Element Configuration
Single
Weight
2.012816mg
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Operating Temperature
-55°C~150°C TJ
Manufacturer
Diodes Incorporated
Vgs(Th) (Max) @ Id
1V @ 250μA
Resistance
400mOhm
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Height
800μm
Power Dissipation
280mW
Max Operating Temperature
150°C
Gate To Source Voltage (Vgs)
6V
Length
1.7mm
Threshold Voltage
1V
Package / Case
SOT-523
Drain To Source Breakdown Voltage
20V
Vgs (Max)
±6V
Width
850μm
Current - Continuous Drain (Id) @ 25°C
630mA Ta
Fall Time (Typ)
12.3 ns
Gate Charge (Qg) (Max) @ Vgs
0.74nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
60.67pF @ 16V
Power Dissipation-Max
280mW Ta
Supplier Device Package
SOT-523
Manufacturer'S Part No.
DMG1012T-7
Input Capacitance
60.67pF
Continuous Drain Current (ID)
630mA
Rds On (Max) @ Id, Vgs
400mOhm @ 600mA, 4.5V
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.21.0095
Drain To Source Resistance
300mOhm
Number Of Channels
1
Number Of Elements
1
Drain To Source Voltage (Vdss)
20V
Turn On Delay Time
5.1 ns
Rise Time
7.4ns
Turn-Off Delay Time
26.7 ns
Rds On Max
400 mΩ

Common questions

Product FAQ

Quick answers for buyers reviewing DMG1012T-7, stock, documentation, and sourcing steps.

What is DMG1012T-7?

DMG1012T-7 is a Transistors - FETs, MOSFETs - Single component from Diodes Incorporated. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for DMG1012T-7?

DMG1012T-7 is listed with package reference SOT-523. The current product description is MOSFET N-CH 20V 630MA SOT-523, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is DMG1012T-7 available in stock?

This page currently shows 19649 units in stock and 16409 units available for DMG1012T-7. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for DMG1012T-7?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for DMG1012T-7 by Diodes Incorporated. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for DMG1012T-7?

Yes. This page links to the datasheet for DMG1012T-7 by Diodes Incorporated, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify DMG1012T-7 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for DMG1012T-7 before approving the order.

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