Supply original NVD5867NLT4G, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET N-CH 60V DPAK

RoHS
Datasheet
Supply original NVD5867NLT4G, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

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Part Number

NVD5867NLT4G

Internal code

TCE000070322

Package

2010

Manufacturer

ON Semiconductor

Key specifications

Serise

Automotive, AEC-Q101

Min Quantity

1

Description

MOSFET N-CH 60V DPAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 60V DPAK

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Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Tin (Sn)

Product Parameter

Drain To Source Voltage (Vdss)

60V

Product Parameter

Number Of Elements

1

Product Parameter

Turn On Delay Time

6.5 ns

Product Parameter

Rise Time

12.6ns

Product Parameter

Turn-Off Delay Time

18.2 ns

Terminal Finish
Tin (Sn)
Drain To Source Voltage (Vdss)
60V
Number Of Elements
1
Turn On Delay Time
6.5 ns
Rise Time
12.6ns
Turn-Off Delay Time
18.2 ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Published
2010
Terminal Form
GULL WING
Element Configuration
Single
Manufacturer
ON Semiconductor
Factory Lead Time
48 Weeks
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Series
Automotive, AEC-Q101
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Length
6.73mm
Vgs(Th) (Max) @ Id
2.5V @ 250μA
Surface Mount
YES
Radiation Hardening
No
Pbfree Code
yes
Number Of Terminations
2
Width
6.22mm
Gate To Source Voltage (Vgs)
20V
Height
2.38mm
Number Of Pins
4
Pin Count
4
Drain-Source On Resistance-Max
0.05Ohm
Drain Current-Max (Abs) (ID)
6A
Continuous Drain Current (ID)
22A
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Power Dissipation
3.3W
Input Capacitance (Ciss) (Max) @ Vds
675pF @ 25V
Fall Time (Typ)
2.4 ns
DS Breakdown Voltage-Min
60V
Pulsed Drain Current-Max (IDM)
85A
Rds On (Max) @ Id, Vgs
39m Ω @ 11A, 10V
Power Dissipation-Max
3.3W Ta 43W Tc
Current - Continuous Drain (Id) @ 25°C
6A Ta 22A Tc
Lifecycle Status
LIFETIME (Last Updated: 4 hours ago)
Manufacturer'S Part No.
NVD5867NLT4G

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What is NVD5867NLT4G?

NVD5867NLT4G is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for NVD5867NLT4G?

NVD5867NLT4G is listed with package reference 2010. The current product description is MOSFET N-CH 60V DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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This page currently shows 73913 units in stock and 67978 units available for NVD5867NLT4G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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