Supply original IRF6668TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 80V 55A DIRECTFET

RoHS
Datasheet
Supply original IRF6668TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRF6668TRPBF

Internal code

TCE000069974

Package

-

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 80V 55A DIRECTFET

key Attributes

-

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Product overview

Overview

MOSFET N-CH 80V 55A DIRECTFET

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Tin/Silver/Copper (Sn/Ag/Cu)

Product Parameter

Turn On Delay Time

19 ns

Product Parameter

Number Of Elements

1

Product Parameter

Rise Time

13ns

Product Parameter

Turn-Off Delay Time

7.1 ns

Product Attribute

Part Status

Active

Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Turn On Delay Time
19 ns
Number Of Elements
1
Rise Time
13ns
Turn-Off Delay Time
7.1 ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2006
Factory Lead Time
12 Weeks
Packaging
Tape & Reel (TR)
Element Configuration
Single
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Gate To Source Voltage (Vgs)
20V
Terminal Position
BOTTOM
Number Of Terminations
3
Drive Voltage (Max Rds On,Min Rds On)
10V
Length
6.35mm
Threshold Voltage
4V
Drain To Source Breakdown Voltage
80V
Voltage - Rated DC
80V
Gate Charge (Qg) (Max) @ Vgs
31nC @ 10V
Avalanche Energy Rating (Eas)
24 mJ
Fall Time (Typ)
23 ns
Power Dissipation
89W
Current - Continuous Drain (Id) @ 25°C
55A Tc
Current Rating
55A
Height
533.4μm
Width
5.0546mm
Power Dissipation-Max
2.8W Ta 89W Tc
Continuous Drain Current (ID)
55mA
Vgs(Th) (Max) @ Id
4.9V @ 100μA
Package / Case
DirectFET™ Isometric MZ
Drain-Source On Resistance-Max
0.015Ohm
Input Capacitance (Ciss) (Max) @ Vds
1320pF @ 25V
Pulsed Drain Current-Max (IDM)
170A
Rds On (Max) @ Id, Vgs
15m Ω @ 12A, 10V
Manufacturer'S Part No.
IRF6668TRPBF
RoHS Status
RoHS non-compliant
REACH SVHC
No SVHC
Moisture Sensitivity Level (MSL)
3 (168 Hours)
JESD-609 Code
e1
HTSUS
8541.29.0095
ECCN Code
EAR99

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What is IRF6668TRPBF?

IRF6668TRPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF6668TRPBF?

IRF6668TRPBF is listed with package reference -. The current product description is MOSFET N-CH 80V 55A DIRECTFET, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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