Supply original NMSD200B01-7, Transistors - FETs, MOSFETs - Single, by Diodes Incorporated

MOSFET N-CH 60V 0.2A SOT363

RoHS
Datasheet
Supply original NMSD200B01-7, Transistors - FETs, MOSFETs - Single, by Diodes Incorporated | TrustCompo

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Part Number

NMSD200B01-7

Internal code

TCE000064056

Package

SOT363

Key specifications

Serise

-

Min Quantity

1

Description

MOSFET N-CH 60V 0.2A SOT363

key Attributes

-

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Product overview

Overview

MOSFET N-CH 60V 0.2A SOT363

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Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Matte Tin (Sn)

Product Parameter

Number Of Channels

1

Product Parameter

Number Of Elements

1

Product Parameter

Turn On Delay Time

20 ns

Product Parameter

Turn-Off Delay Time

40 ns

Product Parameter

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Finish
Matte Tin (Sn)
Number Of Channels
1
Number Of Elements
1
Turn On Delay Time
20 ns
Turn-Off Delay Time
40 ns
Configuration
SINGLE WITH BUILT-IN DIODE
FET Feature
Schottky Diode (Isolated)
Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Length
2.2mm
Width
1.35mm
Package / Case
6-TSSOP, SC-88, SOT-363
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Manufacturer
Diodes Incorporated
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Pin Count
6
Drain To Source Breakdown Voltage
60V
Gate To Source Voltage (Vgs)
20V
Height
1mm
Current Rating
200mA
Voltage - Rated DC
60V
Power Dissipation
200mW
Weight
6.010099mg
Continuous Drain Current (ID)
200mA
Current - Continuous Drain (Id) @ 25°C
200mA Ta
Power Dissipation-Max
200mW Ta
Vgs(Th) (Max) @ Id
3V @ 1mA
Feedback Cap-Max (Crss)
5 pF
Input Capacitance (Ciss) (Max) @ Vds
50pF @ 25V
Drain Current-Max (Abs) (ID)
0.2A
Operating Mode
DEPLETION MODE
Drain-Source On Resistance-Max
2Ohm
Rds On (Max) @ Id, Vgs
3 Ω @ 50mA, 5V
Manufacturer'S Part No.
NMSD200B01-7
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.21.0095
ECCN Code
EAR99

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NMSD200B01-7 is a Transistors - FETs, MOSFETs - Single component from Diodes Incorporated. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for NMSD200B01-7?

NMSD200B01-7 is listed with package reference SOT363. The current product description is MOSFET N-CH 60V 0.2A SOT363, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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