Supply original NVMFD5877NLT1G, Transistors - FETs, MOSFETs - Arrays, by ON Semiconductor

MOSFET 2N-CH 60V 6A 8SOIC

RoHS
Datasheet
Supply original NVMFD5877NLT1G, Transistors - FETs, MOSFETs - Arrays, by ON Semiconductor | TrustCompo

Pictures are for reference only. Please contact us for the latest pictures.

Part Number

NVMFD5877NLT1G

Internal code

TCE000064038

Package

8SOIC

Manufacturer

ON Semiconductor

Key specifications

Serise

-

Min Quantity

1

Description

MOSFET 2N-CH 60V 6A 8SOIC

key Attributes

-

View datasheet

Technical document

Open The Official Datasheet

Review the latest datasheet for NVMFD5877NLT1G from ON Semiconductor in a separate tab so engineers and buyers can check package, electrical characteristics, and application details without leaving this product page.

View datasheet

Why request a quote

Use the RFQ step to confirm the commercial and documentation details buyers usually need before placing an order.

Confirm stock and lead-time expectations
Check CoC or traceability support
Align inspection and fulfillment details

Trust signals

Globally recognized certifications

4 certifications

Visible certifications work best when they are paired with clear operational promises around traceability, handling, and inspection.

ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

Authenticity Verification

CoC Available on Request

Pre-Shipment Inspection

Responsive RFQ Support

Why buyers trust this sourcing flow

Our quality workflow is designed to reduce counterfeit risk and support confident procurement. Components are reviewed through documented handling and inspection steps so buyers can evaluate sourcing with stronger authenticity controls.

Structured product content

Review The Product The Way Buyers Actually Evaluate It

Jump between overview, specs, and related sourcing content without scanning one long uninterrupted page.

Product overview

Overview

The NVMFD5877NLT1G is an N-channel Power MOSFET designed and manufactured by ON Semiconductor. MOSFETs are widely used in power electronics and switching circuits due to their high efficiency and fast switching speeds.

Key Features:

  • N-Channel MOSFET: Enhances the conductivity between the drain and source terminals when a positive voltage is applied to the gate terminal.
  • Low On-Resistance: Provides low resistance between the drain and source terminals when fully turned on, minimizing power dissipation and improving efficiency.
  • Fast Switching Speeds: Offers rapid switching between on and off states, reducing switching losses and improving overall system performance.
  • High Voltage Rating: Designed to withstand high drain-source voltages, making it suitable for high-voltage applications.
  • Thermal Performance: Features excellent thermal properties to ensure reliable operation under high-power conditions.
  • Compact Package: Available in compact surface-mount packages for easy integration into various electronic designs.
  • RoHS Compliance: Compliant with the Restriction of Hazardous Substances directive, ensuring environmental safety.

Applications:

  • Power Supplies: Used in voltage regulator modules, DC-DC converters, and power supplies to control and regulate the flow of power.
  • Motor Control: Employed in motor drive circuits for controlling the speed and direction of electric motors in applications such as robotics, automotive systems, and industrial automation.
  • Switching Circuits: Utilized in switching circuits for power management, load switching, and relay drivers in various electronic devices.
  • LED Lighting: Integrated into LED driver circuits for controlling the brightness and intensity of LED lighting systems in residential, commercial, and automotive applications.
  • Battery Management: Incorporated into battery protection circuits and charging/discharging circuits in portable electronic devices, electric vehicles, and renewable energy systems.

Full technical breakdown

Detailed Specifications

Review grouped attributes and parameters without scanning one oversized table.

Fast scan

Popular Specs Surfaced First

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Published

2006

Product Attribute

Factory Lead Time

13 Weeks

REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2006
Factory Lead Time
13 Weeks
Packaging
Tape & Reel (TR)
Halogen Free
Halogen Free
Height
1.05mm
Part Status
Not For New Designs
Manufacturer
ON Semiconductor
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
3V @ 250μA
Package / Case
8-PowerTDFN
Surface Mount
YES
Radiation Hardening
No
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
8
Pin Count
8
Terminal Form
FLAT
Drain To Source Breakdown Voltage
60V
Gate To Source Voltage (Vgs)
20V
Element Configuration
Dual
Threshold Voltage
3V
Width
5.1mm
Continuous Drain Current (ID)
17A
Gate Charge (Qg) (Max) @ Vgs
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
540pF @ 25V
Drain Current-Max (Abs) (ID)
6A
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
Length
6.1mm
Current - Continuous Drain (Id) @ 25°C
6A
FET Type
2 N-Channel (Dual)
Lifecycle Status
ACTIVE, NOT REC (Last Updated: 1 day ago)
Resistance
39MOhm
Max Power Dissipation
3.2W
Power Dissipation
23W
Pulsed Drain Current-Max (IDM)
74A
Avalanche Energy Rating (Eas)
10.5 mJ
Rds On (Max) @ Id, Vgs
39m Ω @ 7.5A, 10V
Manufacturer'S Part No.
NVMFD5877NLT1G
Terminal Finish
Tin (Sn)
FET Technology
METAL-OXIDE SEMICONDUCTOR
Number Of Elements
2
FET Feature
Logic Level Gate
Turn On Delay Time
8.1 ns
Turn-Off Delay Time
14.5 ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-F6

Common questions

Product FAQ

Quick answers for buyers reviewing NVMFD5877NLT1G, stock, documentation, and sourcing steps.

What is NVMFD5877NLT1G?

NVMFD5877NLT1G is a Transistors - FETs, MOSFETs - Arrays component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for NVMFD5877NLT1G?

NVMFD5877NLT1G is listed with package reference 8SOIC. The current product description is MOSFET 2N-CH 60V 6A 8SOIC, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is NVMFD5877NLT1G available in stock?

This page currently shows 55308 units in stock and 50702 units available for NVMFD5877NLT1G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for NVMFD5877NLT1G?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for NVMFD5877NLT1G by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for NVMFD5877NLT1G?

Yes. This page links to the datasheet for NVMFD5877NLT1G by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify NVMFD5877NLT1G before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for NVMFD5877NLT1G before approving the order.

More sourcing insights

Articles