Supply original SIA906EDJ-T1-GE3, Transistors - FETs, MOSFETs - Arrays, by Vishay

MOSFET 2N-CH 20V 4.5A SC70-6

RoHS
Datasheet
Supply original SIA906EDJ-T1-GE3, Transistors - FETs, MOSFETs - Arrays, by Vishay | TrustCompo

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Part Number

SIA906EDJ-T1-GE3

Internal code

TCE000063041

Package

SC70-6

Manufacturer

Vishay

Key specifications

Serise

TrenchFET®

Min Quantity

1

Description

MOSFET 2N-CH 20V 4.5A SC70-6

key Attributes

-

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Product overview

Overview

MOSFET 2N-CH 20V 4.5A SC70-6

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Turn-Off Delay Time

15 ns

Product Parameter

FET Technology

METAL-OXIDE SEMICONDUCTOR

Product Parameter

Drain To Source Voltage (Vdss)

20V

Product Parameter

Number Of Elements

2

Product Parameter

Turn On Delay Time

5 ns

Product Parameter

FET Feature

Logic Level Gate

Turn-Off Delay Time
15 ns
FET Technology
METAL-OXIDE SEMICONDUCTOR
Drain To Source Voltage (Vdss)
20V
Number Of Elements
2
Turn On Delay Time
5 ns
FET Feature
Logic Level Gate
Rise Time
12ns
Part Status
Active
ECCN
EAR99
Lead Free
Lead Free
REACH Status
Vendor Undefined
Mounting Type
Surface Mount
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Published
2015
Max Junction Temperature (Tj)
150°C
Height
850μm
Terminal Form
NO LEAD
Manufacturer
Vishay
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Power Dissipation
1.9W
Series
TrenchFET®
Contact Plating
Tin
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Pin Count
6
Reach Compliance Code
unknown
Element Configuration
Dual
Gate To Source Voltage (Vgs)
12V
Weight
28.009329mg
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
Drain To Source Breakdown Voltage
20V
Vgs(Th) (Max) @ Id
1.4V @ 250μA
Fall Time (Typ)
12 ns
Width
2.05mm
Length
2.05mm
FET Type
2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Continuous Drain Current (ID)
4.5A
Resistance
46mOhm
Input Capacitance (Ciss) (Max) @ Vds
350pF @ 10V
Rds On (Max) @ Id, Vgs
46m Ω @ 3.9A, 4.5V
Max Power Dissipation
7.8W
Manufacturer Package Identifier
C-07431-DUAL
Package / Case
PowerPAK® SC-70-6 Dual
Manufacturer'S Part No.
SIA906EDJ-T1-GE3
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99

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What is SIA906EDJ-T1-GE3?

SIA906EDJ-T1-GE3 is a Transistors - FETs, MOSFETs - Arrays component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SIA906EDJ-T1-GE3?

SIA906EDJ-T1-GE3 is listed with package reference SC70-6. The current product description is MOSFET 2N-CH 20V 4.5A SC70-6, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SIA906EDJ-T1-GE3 available in stock?

This page currently shows 10506 units in stock and 10004 units available for SIA906EDJ-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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