Supply original IRF6629TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 25V 29A DIRECTFET

RoHS
Datasheet
Supply original IRF6629TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRF6629TRPBF

Internal code

TCE000062949

Package

-

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 25V 29A DIRECTFET

key Attributes

-

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Product overview

Overview

MOSFET N-CH 25V 29A DIRECTFET

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Published

2006

Product Attribute

Packaging

Tape & Reel (TR)

REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2006
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Peak Reflow Temperature (Cel)
260
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Operating Temperature
-40°C~150°C TJ
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
5
Gate To Source Voltage (Vgs)
20V
Terminal Position
BOTTOM
Number Of Terminations
3
Length
6.35mm
Drain To Source Breakdown Voltage
25V
Continuous Drain Current (ID)
23A
Voltage - Rated DC
25V
Power Dissipation
100W
Width
5.05mm
Current Rating
29A
Gate Charge (Qg) (Max) @ Vgs
51nC @ 4.5V
Package / Case
DirectFET™ Isometric MX
Vgs(Th) (Max) @ Id
2.35V @ 100μA
Height
506μm
Avalanche Energy Rating (Eas)
1170 mJ
Drain Current-Max (Abs) (ID)
180A
Rds On (Max) @ Id, Vgs
2.1m Ω @ 29A, 10V
Input Capacitance (Ciss) (Max) @ Vds
4260pF @ 13V
Drain-Source On Resistance-Max
0.0021Ohm
Fall Time (Typ)
7.4 ns
Manufacturer'S Part No.
IRF6629TRPBF
Pulsed Drain Current-Max (IDM)
230A
Current - Continuous Drain (Id) @ 25°C
29A Ta 180A Tc
Power Dissipation-Max
2.8W Ta 100W Tc
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
RoHS Compliant
JESD-609 Code
e1
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-XBCC-N3
Turn-Off Delay Time
20 ns
Terminal Finish
TIN SILVER COPPER
Number Of Elements
1
Turn On Delay Time
20 ns
Rise Time
67ns
Configuration
SINGLE WITH BUILT-IN DIODE

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What is IRF6629TRPBF?

IRF6629TRPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF6629TRPBF?

IRF6629TRPBF is listed with package reference -. The current product description is MOSFET N-CH 25V 29A DIRECTFET, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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This page currently shows 18819 units in stock and 12541 units available for IRF6629TRPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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