Supply original FDB035N10A, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET N-CH 100V 120A D2PAK

RoHS
Datasheet
Supply original FDB035N10A, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

Pictures are for reference only. Please contact us for the latest pictures.

Part Number

FDB035N10A

Internal code

TCE000062799

Package

TO-263-3

Manufacturer

ON Semiconductor

Key specifications

Serise

PowerTrench®

Min Quantity

1

Description

MOSFET N-CH 100V 120A D2PAK

key Attributes

-

View datasheet

Technical document

Open The Official Datasheet

Review the latest datasheet for FDB035N10A from ON Semiconductor in a separate tab so engineers and buyers can check package, electrical characteristics, and application details without leaving this product page.

View datasheet

Why request a quote

Use the RFQ step to confirm the commercial and documentation details buyers usually need before placing an order.

Confirm stock and lead-time expectations
Check CoC or traceability support
Align inspection and fulfillment details

Trust signals

Globally recognized certifications

4 certifications

Visible certifications work best when they are paired with clear operational promises around traceability, handling, and inspection.

ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

Authenticity Verification

CoC Available on Request

Pre-Shipment Inspection

Responsive RFQ Support

Why buyers trust this sourcing flow

Our quality workflow is designed to reduce counterfeit risk and support confident procurement. Components are reviewed through documented handling and inspection steps so buyers can evaluate sourcing with stronger authenticity controls.

Structured product content

Review The Product The Way Buyers Actually Evaluate It

Jump between overview, specs, and related sourcing content without scanning one long uninterrupted page.

Product overview

Overview

MOSFET N-CH 100V 120A D2PAK

Full technical breakdown

Detailed Specifications

Review grouped attributes and parameters without scanning one oversized table.

Fast scan

Popular Specs Surfaced First

Product Parameter

Terminal Finish

Tin (Sn)

Product Parameter

Number Of Elements

1

Product Parameter

Turn-Off Delay Time

37 ns

Product Parameter

Turn On Delay Time

22 ns

Product Parameter

Rise Time

54ns

Product Attribute

Part Status

Active

Terminal Finish
Tin (Sn)
Number Of Elements
1
Turn-Off Delay Time
37 ns
Turn On Delay Time
22 ns
Rise Time
54ns
Part Status
Active
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
8 Weeks
Packaging
Tape & Reel (TR)
Terminal Form
GULL WING
Published
2013
Length
10.67mm
Element Configuration
Single
Manufacturer
ON Semiconductor
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C
120A Tc
Series
PowerTrench®
Weight
1.31247g
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Number Of Terminations
2
Gate To Source Voltage (Vgs)
20V
Drive Voltage (Max Rds On,Min Rds On)
10V
Height
4.83mm
Width
9.65mm
Drain To Source Breakdown Voltage
100V
Power Dissipation
333W
Power Dissipation-Max
333W Tc
Fall Time (Typ)
11 ns
Additional Feature
ULTRA-LOW RESISTANCE
Resistance
3.5mOhm
Gate Charge (Qg) (Max) @ Vgs
116nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
7295pF @ 25V
Pulsed Drain Current-Max (IDM)
704A
Rds On (Max) @ Id, Vgs
3.5m Ω @ 75A, 10V
Continuous Drain Current (ID)
214A
Avalanche Energy Rating (Eas)
558 mJ
Manufacturer'S Part No.
FDB035N10A
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99

Common questions

Product FAQ

Quick answers for buyers reviewing FDB035N10A, stock, documentation, and sourcing steps.

What is FDB035N10A?

FDB035N10A is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FDB035N10A?

FDB035N10A is listed with package reference TO-263-3. The current product description is MOSFET N-CH 100V 120A D2PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FDB035N10A available in stock?

This page currently shows 30561 units in stock and 30561 units available for FDB035N10A. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for FDB035N10A?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDB035N10A by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FDB035N10A?

Yes. This page links to the datasheet for FDB035N10A by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify FDB035N10A before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FDB035N10A before approving the order.

More sourcing insights

Articles