Supply original DMN2400UFB4-7, Transistors - FETs, MOSFETs - Single, by Diodes Incorporated

MOSFET N-CH 20V 750MA DFN1006H4

RoHS
Datasheet
Supply original DMN2400UFB4-7, Transistors - FETs, MOSFETs - Single, by Diodes Incorporated | TrustCompo

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Part Number

DMN2400UFB4-7

Internal code

TCE000062631

Package

-

Key specifications

Serise

-

Min Quantity

1

Description

MOSFET N-CH 20V 750MA DFN1006H4

key Attributes

-

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Product overview

Overview

MOSFET N-CH 20V 750MA DFN1006H4

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Detailed Specifications

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Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

JESD-609 Code

e4

Export Classifications & Environmental

HTSUS

8541.21.0095

Export Classifications & Environmental

ECCN Code

EAR99

Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-609 Code
e4
HTSUS
8541.21.0095
ECCN Code
EAR99
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2011
Factory Lead Time
6 Weeks
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Peak Reflow Temperature (Cel)
260
Element Configuration
Single
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Manufacturer
Diodes Incorporated
Contact Plating
Gold
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Pin Count
3
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Terminal Position
BOTTOM
Number Of Terminations
3
Gate To Source Voltage (Vgs)
12V
Vgs (Max)
±12V
Vgs(Th) (Max) @ Id
900mV @ 250μA
Additional Feature
HIGH RELIABILITY, LOW THRESHOLD
Fall Time (Typ)
9.6 ns
DS Breakdown Voltage-Min
20V
Continuous Drain Current (ID)
750mA
Drain Current-Max (Abs) (ID)
0.75A
Current - Continuous Drain (Id) @ 25°C
750mA Ta
Height
350μm
Power Dissipation-Max
470mW Ta
Length
1.08mm
Width
675μm
Package / Case
3-XFDFN
Drain-Source On Resistance-Max
0.55Ohm
Manufacturer'S Part No.
DMN2400UFB4-7
Gate Charge (Qg) (Max) @ Vgs
0.5nC @ 4.5V
Rds On (Max) @ Id, Vgs
550m Ω @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds
36pF @ 16V
Number Of Channels
1
Number Of Elements
1
Drain To Source Voltage (Vdss)
20V
Turn-Off Delay Time
14.8 ns
Rise Time
3.82ns
Turn On Delay Time
4.11 ns

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What is DMN2400UFB4-7?

DMN2400UFB4-7 is a Transistors - FETs, MOSFETs - Single component from Diodes Incorporated. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for DMN2400UFB4-7?

DMN2400UFB4-7 is listed with package reference -. The current product description is MOSFET N-CH 20V 750MA DFN1006H4, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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This page currently shows 76427 units in stock and 33016 units available for DMN2400UFB4-7. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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