Supply original DMN3010LSS-13, Transistors - FETs, MOSFETs - Single, by Diodes Incorporated

MOSFET N-CH 30V 16A 8-SOIC

RoHS
Datasheet
Supply original DMN3010LSS-13, Transistors - FETs, MOSFETs - Single, by Diodes Incorporated | TrustCompo

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Part Number

DMN3010LSS-13

Internal code

TCE000062629

Package

8-SOIC

Key specifications

Serise

-

Min Quantity

1

Description

MOSFET N-CH 30V 16A 8-SOIC

key Attributes

-

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Product overview

Overview

MOSFET N-CH 30V 16A 8-SOIC

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Detailed Specifications

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Product Attribute

Part Status

Active

Product Attribute

Published

2008

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Factory Lead Time

16 Weeks

Part Status
Active
Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Factory Lead Time
16 Weeks
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Length
5.3mm
Package / Case
8-SOIC (0.154, 3.90mm Width)
Width
4.1mm
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs(Th) (Max) @ Id
2V @ 250μA
Manufacturer
Diodes Incorporated
Additional Feature
HIGH RELIABILITY
Pulsed Drain Current-Max (IDM)
64A
Subcategory
FET General Purpose Powers
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Height
1.5mm
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
8
Number Of Terminations
8
Pin Count
8
Power Dissipation
2.5W
Gate To Source Voltage (Vgs)
20V
Power Dissipation-Max
2.5W Ta
Drain To Source Breakdown Voltage
30V
Continuous Drain Current (ID)
16A
Fall Time (Typ)
27 ns
Current - Continuous Drain (Id) @ 25°C
16A Ta
Drain-Source On Resistance-Max
0.009Ohm
Weight
850.995985mg
Gate Charge (Qg) (Max) @ Vgs
43.7nC @ 10V
Manufacturer'S Part No.
DMN3010LSS-13
Rds On (Max) @ Id, Vgs
9m Ω @ 16A, 10V
Input Capacitance (Ciss) (Max) @ Vds
2096pF @ 15V
Terminal Finish
Matte Tin (Sn)
Turn-Off Delay Time
45 ns
Number Of Channels
1
Number Of Elements
1
Rise Time
8ns
Configuration
SINGLE WITH BUILT-IN DIODE
Turn On Delay Time
5.6 ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99

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What is DMN3010LSS-13?

DMN3010LSS-13 is a Transistors - FETs, MOSFETs - Single component from Diodes Incorporated. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for DMN3010LSS-13?

DMN3010LSS-13 is listed with package reference 8-SOIC. The current product description is MOSFET N-CH 30V 16A 8-SOIC, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is DMN3010LSS-13 available in stock?

This page currently shows 63470 units in stock and 27212 units available for DMN3010LSS-13. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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