Supply original DMG4800LSD-13, Transistors - FETs, MOSFETs - Arrays, by Diodes Incorporated

MOSFET 2N-CH 30V 7.5A 8SO

RoHS
Datasheet
Supply original DMG4800LSD-13, Transistors - FETs, MOSFETs - Arrays, by Diodes Incorporated | TrustCompo

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Part Number

DMG4800LSD-13

Internal code

TCE000062621

Package

SOIC

Key specifications

Serise

-

Min Quantity

1

Description

MOSFET 2N-CH 30V 7.5A 8SO

key Attributes

-

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Product overview

Overview

MOSFET 2N-CH 30V 7.5A 8SO

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Factory Lead Time

16 Weeks

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
16 Weeks
Published
2011
Packaging
Cut Tape (CT)
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Max Junction Temperature (Tj)
150°C
Package / Case
8-SOIC (0.154, 3.90mm Width)
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Manufacturer
Diodes Incorporated
Additional Feature
HIGH RELIABILITY
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
8
Number Of Terminations
8
Pin Count
8
Height
1.7mm
Element Configuration
Dual
Drain To Source Breakdown Voltage
30V
Length
4.95mm
Gate To Source Voltage (Vgs)
25V
Threshold Voltage
1.6V
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
Width
3.95mm
FET Type
2 N-Channel (Dual)
Weight
73.992255mg
Vgs(Th) (Max) @ Id
1.6V @ 250μA
Continuous Drain Current (ID)
7.5A
Rds On (Max) @ Id, Vgs
16m Ω @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds
798pF @ 10V
Manufacturer'S Part No.
DMG4800LSD-13
Power Dissipation
1.17W
Base Part Number
DMG4800LSD
Gate Charge (Qg) (Max) @ Vgs
8.56nC @ 5V
Max Power Dissipation
1.17W
Drain-Source On Resistance-Max
0.016Ohm
Fall Time (Typ)
8.55 ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
FET Technology
METAL-OXIDE SEMICONDUCTOR
Number Of Elements
2
Drain To Source Voltage (Vdss)
30V
FET Feature
Logic Level Gate
Rise Time
4.5ns
Turn On Delay Time
5.03 ns
Turn-Off Delay Time
26.33 ns

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What is DMG4800LSD-13?

DMG4800LSD-13 is a Transistors - FETs, MOSFETs - Arrays component from Diodes Incorporated. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for DMG4800LSD-13?

DMG4800LSD-13 is listed with package reference SOIC. The current product description is MOSFET 2N-CH 30V 7.5A 8SO, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is DMG4800LSD-13 available in stock?

This page currently shows 10000 units in stock and 10000 units available for DMG4800LSD-13. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for DMG4800LSD-13?

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