Supply original SIR800DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay

MOSFET N-CH 20V 50A PPAK SO-8

RoHS
Datasheet
Supply original SIR800DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo

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Part Number

SIR800DP-T1-GE3

Internal code

TCE000062357

Package

2010

Manufacturer

Vishay

Key specifications

Serise

TrenchFET®

Min Quantity

1

Description

MOSFET N-CH 20V 50A PPAK SO-8

key Attributes

-

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Product overview

Overview

MOSFET N-CH 20V 50A PPAK SO-8

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

ECCN

EAR99

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Factory Lead Time

14 Weeks

Product Attribute

Packaging

Tape & Reel (TR)

Product Attribute

Published

2010

Part Status
Active
ECCN
EAR99
Mounting Type
Surface Mount
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Published
2010
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Element Configuration
Single
Manufacturer
Vishay
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Terminal Form
C BEND
Vgs(Th) (Max) @ Id
1.5V @ 250μA
Weight
506.605978mg
Series
TrenchFET®
Package / Case
PowerPAK® SO-8
Avalanche Energy Rating (Eas)
45 mJ
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
5
Number Of Pins
8
Pin Count
8
Gate To Source Voltage (Vgs)
12V
Fall Time (Typ)
27 ns
Drain-Source On Resistance-Max
0.0023Ohm
Vgs (Max)
±12V
Current - Continuous Drain (Id) @ 25°C
50A Tc
Continuous Drain Current (ID)
50A
Drain To Source Breakdown Voltage
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 10V
Power Dissipation
5.2W
Power Dissipation-Max
5.2W Ta 69W Tc
Gate Charge (Qg) (Max) @ Vgs
133nC @ 10V
Threshold Voltage
600mV
Nominal Vgs
600 mV
Drain Current-Max (Abs) (ID)
35.4A
Manufacturer'S Part No.
SIR800DP-T1-GE3
Input Capacitance (Ciss) (Max) @ Vds
5125pF @ 10V
Rds On (Max) @ Id, Vgs
2.3m Ω @ 15A, 10V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
JESD-30 Code
R-XDSO-C5
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Number Of Channels
1
Number Of Elements
1
Turn On Delay Time
27 ns
Turn-Off Delay Time
70 ns
Rise Time
15ns

Common questions

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What is SIR800DP-T1-GE3?

SIR800DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SIR800DP-T1-GE3?

SIR800DP-T1-GE3 is listed with package reference 2010. The current product description is MOSFET N-CH 20V 50A PPAK SO-8, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SIR800DP-T1-GE3 available in stock?

This page currently shows 75341 units in stock and 35554 units available for SIR800DP-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for SIR800DP-T1-GE3?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SIR800DP-T1-GE3 by Vishay. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for SIR800DP-T1-GE3?

Yes. This page links to the datasheet for SIR800DP-T1-GE3 by Vishay, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify SIR800DP-T1-GE3 before ordering?

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