Supply original SIR470DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay

MOSFET N-CH 40V 60A PPAK SO-8

RoHS
Datasheet
Supply original SIR470DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo

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Part Number

SIR470DP-T1-GE3

Internal code

TCE000062355

Package

-

Manufacturer

Vishay

Key specifications

Serise

TrenchFET®

Min Quantity

1

Description

MOSFET N-CH 40V 60A PPAK SO-8

key Attributes

-

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ISO 14001

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Product overview

Overview

MOSFET N-CH 40V 60A PPAK SO-8

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Matte Tin (Sn)

Product Parameter

Number Of Channels

1

Product Parameter

Number Of Elements

1

Product Parameter

Turn On Delay Time

40 ns

Product Parameter

Turn-Off Delay Time

85 ns

Product Parameter

Rise Time

31ns

Terminal Finish
Matte Tin (Sn)
Number Of Channels
1
Number Of Elements
1
Turn On Delay Time
40 ns
Turn-Off Delay Time
85 ns
Rise Time
31ns
JESD-609 Code
e3
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
JESD-30 Code
R-PDSO-F5
Part Status
Active
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Published
2015
Element Configuration
Single
Manufacturer
Vishay
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Additional Feature
AVALANCHE RATED
Weight
506.605978mg
Series
TrenchFET®
Vgs(Th) (Max) @ Id
2.5V @ 250μA
Package / Case
PowerPAK® SO-8
Nominal Vgs
2.5 V
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
5
Number Of Pins
8
Pin Count
8
Length
4.9mm
Terminal Form
FLAT
Gate To Source Voltage (Vgs)
20V
Threshold Voltage
1V
Current - Continuous Drain (Id) @ 25°C
60A Tc
Drain To Source Breakdown Voltage
40V
Continuous Drain Current (ID)
60A
Height
1.04mm
Width
5.89mm
Fall Time (Typ)
39 ns
Power Dissipation-Max
6.25W Ta 104W Tc
Power Dissipation
6.25W
Gate Charge (Qg) (Max) @ Vgs
155nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
5660pF @ 20V
Manufacturer'S Part No.
SIR470DP-T1-GE3
Turn Off Time-Max (Toff)
225ns
Rds On (Max) @ Id, Vgs
2.3m Ω @ 20A, 10V
Resistance
2.3MOhm

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What is SIR470DP-T1-GE3?

SIR470DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SIR470DP-T1-GE3?

SIR470DP-T1-GE3 is listed with package reference -. The current product description is MOSFET N-CH 40V 60A PPAK SO-8, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SIR470DP-T1-GE3 available in stock?

This page currently shows 84880 units in stock and 81466 units available for SIR470DP-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for SIR470DP-T1-GE3?

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