Supply original IRF7101TRPBF, Transistors - FETs, MOSFETs - Arrays, by Infineon Technologies

MOSFET 2N-CH 20V 3.5A 8-SOIC

RoHS
Datasheet
Supply original IRF7101TRPBF, Transistors - FETs, MOSFETs - Arrays, by Infineon Technologies | TrustCompo

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Part Number

IRF7101TRPBF

Internal code

TCE000061390

Package

8-SOIC

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET 2N-CH 20V 3.5A 8-SOIC

key Attributes

-

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Product overview

Overview

MOSFET 2N-CH 20V 3.5A 8-SOIC

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Matte Tin (Sn)

Product Parameter

FET Technology

METAL-OXIDE SEMICONDUCTOR

Product Parameter

Dual Supply Voltage

20V

Product Parameter

Number Of Elements

2

Product Parameter

Turn On Delay Time

7 ns

Product Parameter

Rise Time

10ns

Terminal Finish
Matte Tin (Sn)
FET Technology
METAL-OXIDE SEMICONDUCTOR
Dual Supply Voltage
20V
Number Of Elements
2
Turn On Delay Time
7 ns
Rise Time
10ns
FET Feature
Logic Level Gate
Turn-Off Delay Time
24 ns
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Published
1997
Packaging
Tape & Reel (TR)
Width
3.9878mm
Terminal Form
GULL WING
Package / Case
8-SOIC (0.154, 3.90mm Width)
Part Status
Not For New Designs
Max Power Dissipation
2W
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Nominal Vgs
3 V
Vgs(Th) (Max) @ Id
3V @ 250μA
Length
4.9784mm
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
8
Number Of Terminations
8
Current Rating
3.5A
Element Configuration
Dual
Power Rating
2W
Threshold Voltage
3V
Gate To Source Voltage (Vgs)
12V
Height
1.4986mm
Power Dissipation
2W
Row Spacing
6.3 mm
Fall Time (Typ)
30 ns
Resistance
100mOhm
Voltage - Rated DC
20V
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
Drain To Source Breakdown Voltage
20V
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
FET Type
2 N-Channel (Dual)
Pulsed Drain Current-Max (IDM)
14A
Rds On (Max) @ Id, Vgs
100m Ω @ 1.8A, 10V
Continuous Drain Current (ID)
3.5A
Input Capacitance (Ciss) (Max) @ Vds
320pF @ 15V
Base Part Number
IRF7101PBF
Manufacturer'S Part No.
IRF7101TRPBF
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99

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IRF7101TRPBF is a Transistors - FETs, MOSFETs - Arrays component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF7101TRPBF?

IRF7101TRPBF is listed with package reference 8-SOIC. The current product description is MOSFET 2N-CH 20V 3.5A 8-SOIC, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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