Supply original IRFP054NPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 55V 81A TO-247AC

RoHS
Datasheet
Supply original IRFP054NPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRFP054NPBF

Internal code

TCE000056534

Package

TO-

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 55V 81A TO-247AC

key Attributes

-

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Product overview

Overview

The IRFP054NPBF is likely a high-power N-channel MOSFET designed for various switching and amplification applications in power electronics. MOSFETs are widely used for their efficient switching capabilities and low on-resistance.

Key Features:

  • N-Channel MOSFET: Utilizes an N-channel structure, suitable for use in both high-side and low-side switching configurations.
  • Low On-Resistance: Features low on-resistance (RDS(on)) to minimize conduction losses and improve efficiency.
  • High Voltage Rating: Typically rated for high drain-source voltage (VDS) to support high-voltage applications.
  • High Current Capability: Offers high drain current (ID) capability to handle large currents in power circuits.
  • Fast Switching Speeds: Provides fast switching speeds to minimize switching losses and improve overall system efficiency.
  • Robustness: Designed to withstand high-voltage and high-current conditions, with built-in protections against overcurrent and overvoltage events.
  • Advanced Packaging: Available in advanced packaging options for improved thermal performance and reliability.
  • RoHS Compliance: Complies with the Restriction of Hazardous Substances (RoHS) directive, ensuring environmental friendliness and regulatory compliance.

Applications: 

  • Switching Power Supplies: Used in AC-DC and DC-DC converters, inverters, and SMPS (Switched-Mode Power Supplies) for voltage regulation and power conversion.
  • Motor Control: Integrated into motor drive circuits for controlling the speed and direction of electric motors in industrial, automotive, and consumer applications.
  • Power Amplifiers: Employed in audio amplifiers, RF amplifiers, and other high-power amplification circuits for signal amplification and power delivery.
  • Power Management: Utilized in power management circuits for load switching, voltage regulation, and power distribution in various electronic systems.
  • Electronic Loads: Used as active loads in electronic load circuits for testing power supplies, batteries, and other power sources.
  • Energy Storage Systems: Integrated into energy storage systems such as battery management systems (BMS) and grid-tied inverters for energy storage and conversion.

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

Mounting Type

Through Hole

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Packaging

Bulk

Product Attribute

Factory Lead Time

12 Weeks

Part Status
Active
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Packaging
Bulk
Factory Lead Time
12 Weeks
Published
1997
Element Configuration
Single
Lead Free
Contains Lead, Lead Free
Length
15.87mm
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Voltage - Rated DC
55V
Input Capacitance (Ciss) (Max) @ Vds
2900pF @ 25V
Power Dissipation-Max
170W Tc
Pulsed Drain Current-Max (IDM)
290A
Package / Case
TO-247-3
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Radiation Hardening
No
Mount
Through Hole
Number Of Pins
3
Gate To Source Voltage (Vgs)
20V
Number Of Terminations
3
Drive Voltage (Max Rds On,Min Rds On)
10V
Threshold Voltage
4V
Drain To Source Breakdown Voltage
55V
Fall Time (Typ)
46 ns
JEDEC-95 Code
TO-247AC
Power Dissipation
130W
Recovery Time
120 ns
Gate Charge (Qg) (Max) @ Vgs
130nC @ 10V
Lead Pitch
5.45mm
Height
20.7mm
Width
5.3086mm
Resistance
12mOhm
Continuous Drain Current (ID)
81A
Current - Continuous Drain (Id) @ 25°C
81A Tc
Current Rating
72A
Rds On (Max) @ Id, Vgs
12m Ω @ 43A, 10V
Manufacturer'S Part No.
IRFP054NPBF
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
RoHS non-compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Turn On Delay Time
11 ns
Rise Time
66ns
Number Of Elements
1
Turn-Off Delay Time
40 ns
Dual Supply Voltage
55V

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What is IRFP054NPBF?

IRFP054NPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRFP054NPBF?

IRFP054NPBF is listed with package reference TO-. The current product description is MOSFET N-CH 55V 81A TO-247AC, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRFP054NPBF available in stock?

This page currently shows 34636 units in stock and 34636 units available for IRFP054NPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for IRFP054NPBF?

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