Supply original FDD3860, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

MOSFET N-CH 100V 6.2A DPAK

RoHS
Datasheet
Supply original FDD3860, Transistors - FETs, MOSFETs - Single, by ON Semiconductor | TrustCompo

Pictures are for reference only. Please contact us for the latest pictures.

Part Number

FDD3860

Internal code

TCE000056390

Package

TO-252-3

Manufacturer

ON Semiconductor

Key specifications

Serise

PowerTrench®

Min Quantity

1

Description

MOSFET N-CH 100V 6.2A DPAK

key Attributes

-

View datasheet

Technical document

Open The Official Datasheet

Review the latest datasheet for FDD3860 from ON Semiconductor in a separate tab so engineers and buyers can check package, electrical characteristics, and application details without leaving this product page.

View datasheet

Why request a quote

Use the RFQ step to confirm the commercial and documentation details buyers usually need before placing an order.

Confirm stock and lead-time expectations
Check CoC or traceability support
Align inspection and fulfillment details

Trust signals

Globally recognized certifications

4 certifications

Visible certifications work best when they are paired with clear operational promises around traceability, handling, and inspection.

ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

Authenticity Verification

CoC Available on Request

Pre-Shipment Inspection

Responsive RFQ Support

Why buyers trust this sourcing flow

Our quality workflow is designed to reduce counterfeit risk and support confident procurement. Components are reviewed through documented handling and inspection steps so buyers can evaluate sourcing with stronger authenticity controls.

Structured product content

Review The Product The Way Buyers Actually Evaluate It

Jump between overview, specs, and related sourcing content without scanning one long uninterrupted page.

Product overview

Overview

MOSFET N-CH 100V 6.2A DPAK

Full technical breakdown

Detailed Specifications

Review grouped attributes and parameters without scanning one oversized table.

Fast scan

Popular Specs Surfaced First

Product Parameter

Number Of Elements

1

Product Parameter

Turn On Delay Time

16 ns

Product Parameter

Rise Time

10ns

Product Parameter

Turn-Off Delay Time

24 ns

Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Number Of Elements
1
Turn On Delay Time
16 ns
Rise Time
10ns
Turn-Off Delay Time
24 ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2006
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Packaging
Tape & Reel (TR)
Terminal Form
GULL WING
Element Configuration
Single
Manufacturer
ON Semiconductor
Height
2.39mm
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Length
6.73mm
Drain Current-Max (Abs) (ID)
42A
Series
PowerTrench®
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Gate To Source Voltage (Vgs)
20V
Drive Voltage (Max Rds On,Min Rds On)
10V
Threshold Voltage
3.8V
Drain To Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
60A
Weight
260.37mg
Power Dissipation
3.1W
Gate Charge (Qg) (Max) @ Vgs
31nC @ 10V
Resistance
36mOhm
Fall Time (Typ)
7 ns
Vgs(Th) (Max) @ Id
4.5V @ 250μA
Current - Continuous Drain (Id) @ 25°C
6.2A Ta
Continuous Drain Current (ID)
6.2A
Power Dissipation-Max
3.1W Ta 69W Tc
Manufacturer'S Part No.
FDD3860
Rds On (Max) @ Id, Vgs
36m Ω @ 5.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1740pF @ 50V

Common questions

Product FAQ

Quick answers for buyers reviewing FDD3860, stock, documentation, and sourcing steps.

What is FDD3860?

FDD3860 is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FDD3860?

FDD3860 is listed with package reference TO-252-3. The current product description is MOSFET N-CH 100V 6.2A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FDD3860 available in stock?

This page currently shows 31752 units in stock and 30644 units available for FDD3860. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for FDD3860?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDD3860 by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for FDD3860?

Yes. This page links to the datasheet for FDD3860 by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify FDD3860 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FDD3860 before approving the order.

More sourcing insights

Articles