Supply original SIR166DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay

MOSFET N-CH 30V 40A PPAK SO-8

RoHS
Datasheet
Supply original SIR166DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo

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Part Number

SIR166DP-T1-GE3

Internal code

TCE000056018

Package

2010

Manufacturer

Vishay

Key specifications

Serise

TrenchFET®

Min Quantity

1

Description

MOSFET N-CH 30V 40A PPAK SO-8

key Attributes

-

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Product overview

Overview

MOSFET N-CH 30V 40A PPAK SO-8

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Factory Lead Time

14 Weeks

Product Attribute

Packaging

Tape & Reel (TR)

Part Status
Active
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Published
2010
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Element Configuration
Single
Manufacturer
Vishay
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Current - Continuous Drain (Id) @ 25°C
40A Tc
Terminal Form
C BEND
Weight
506.605978mg
Nominal Vgs
1.2 V
Series
TrenchFET®
Continuous Drain Current (ID)
40A
Power Dissipation
5W
Package / Case
PowerPAK® SO-8
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
5
Number Of Pins
8
Pin Count
8
Gate To Source Voltage (Vgs)
20V
Drain To Source Breakdown Voltage
30V
Fall Time (Typ)
16 ns
Resistance
4mOhm
Threshold Voltage
1.2V
Pulsed Drain Current-Max (IDM)
70A
Vgs(Th) (Max) @ Id
2.2V @ 250μA
Power Dissipation-Max
5W Ta 48W Tc
Input Capacitance (Ciss) (Max) @ Vds
3340pF @ 15V
Gate Charge (Qg) (Max) @ Vgs
77nC @ 10V
Manufacturer'S Part No.
SIR166DP-T1-GE3
Rds On (Max) @ Id, Vgs
3.2m Ω @ 15A, 10V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
JESD-30 Code
R-XDSO-C5
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Turn-Off Delay Time
44 ns
Number Of Channels
1
Number Of Elements
1
Rise Time
21ns
Turn On Delay Time
28 ns

Common questions

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What is SIR166DP-T1-GE3?

SIR166DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SIR166DP-T1-GE3?

SIR166DP-T1-GE3 is listed with package reference 2010. The current product description is MOSFET N-CH 30V 40A PPAK SO-8, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SIR166DP-T1-GE3 available in stock?

This page currently shows 43942 units in stock and 42103 units available for SIR166DP-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for SIR166DP-T1-GE3?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SIR166DP-T1-GE3 by Vishay. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for SIR166DP-T1-GE3?

Yes. This page links to the datasheet for SIR166DP-T1-GE3 by Vishay, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify SIR166DP-T1-GE3 before ordering?

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