Supply original IRF630NSTRLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 200V 9.3A D2PAK

RoHS
Datasheet
Supply original IRF630NSTRLPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRF630NSTRLPBF

Internal code

TCE000050819

Package

2010

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 200V 9.3A D2PAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 200V 9.3A D2PAK

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Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

Matte Tin (Sn) - with Nickel (Ni) barrier

Product Parameter

Number Of Elements

1

Product Parameter

Rise Time

14ns

Product Parameter

Turn-Off Delay Time

27 ns

Product Parameter

Turn On Delay Time

7.9 ns

Product Attribute

Part Status

Active

Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Number Of Elements
1
Rise Time
14ns
Turn-Off Delay Time
27 ns
Turn On Delay Time
7.9 ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Packaging
Tape & Reel (TR)
Published
2010
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Lead Free
Contains Lead, Lead Free
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Gate To Source Voltage (Vgs)
20V
Voltage - Rated DC
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Resistance
300mOhm
Width
9.65mm
Height
4.826mm
Length
10.668mm
Drain To Source Breakdown Voltage
200V
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Fall Time (Typ)
15 ns
Power Dissipation
82W
Power Dissipation-Max
82W Tc
Avalanche Energy Rating (Eas)
94 mJ
Current Rating
9.3A
Continuous Drain Current (ID)
9.3A
Input Capacitance (Ciss) (Max) @ Vds
575pF @ 25V
Rds On (Max) @ Id, Vgs
300m Ω @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C
9.3A Tc
Manufacturer'S Part No.
IRF630NSTRLPBF
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99

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What is IRF630NSTRLPBF?

IRF630NSTRLPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF630NSTRLPBF?

IRF630NSTRLPBF is listed with package reference 2010. The current product description is MOSFET N-CH 200V 9.3A D2PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRF630NSTRLPBF available in stock?

This page currently shows 98466 units in stock and 51535 units available for IRF630NSTRLPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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