Supply original IPB120P04P4L03ATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET P-CH 40V 120A TO263-3

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Datasheet
Supply original IPB120P04P4L03ATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IPB120P04P4L03ATMA1

Internal code

TCE000050807

Package

TO263

Key specifications

Serise

OptiMOS™

Min Quantity

1

Description

MOSFET P-CH 40V 120A TO263-3

key Attributes

-

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Product overview

Overview

The IPB120P04P4L03ATMA1 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for applications requiring efficient power management and switching capabilities, making it suitable for a variety of uses in power supplies, motor drives, and other electronic circuits.

Key Features:

  1. Voltage Rating: The IPB120P04P4L03ATMA1 has a maximum drain-source voltage (V_DS) of 40V, which allows it to handle a wide range of voltage applications while ensuring reliability and safety.

  2. Current Rating: It can handle a continuous drain current (I_D) of up to 120A, making it capable of managing high power loads effectively.

  3. R_DS(on): The on-resistance (R_DS(on)) is exceptionally low, typically around 4.4 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power losses during operation, enhancing overall efficiency.

  4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which allows for easy driving with standard logic levels.

  5. Package Type: The device is housed in a TO-220 package, which provides good thermal performance and allows for easy mounting on heatsinks for effective heat dissipation.

  6. Thermal Resistance: The thermal resistance from junction to case (R_thJC) is low, ensuring that the device can operate at higher temperatures without compromising performance.

  7. Switching Speed: The IPB120P04P4L03ATMA1 features fast switching capabilities, making it suitable for high-frequency applications.

  8. Applications: This MOSFET is ideal for use in synchronous rectification, DC-DC converters, and other power management applications where efficiency and thermal performance are critical.

Electrical Characteristics:

  • Maximum Gate-Source Voltage (V_GS): ±20V
  • Maximum Pulsed Drain Current (I_D,pulse): 240A
  • Total Gate Charge (Q_g): Approximately 60 nC, which indicates the amount of charge required to turn the MOSFET on and off.

Reliability and Quality:

Infineon Technologies is known for its commitment to quality and reliability, and the IPB120P04P4L03ATMA1 is no exception. It is designed to meet stringent automotive and industrial standards, ensuring that it can withstand harsh operating conditions.

Conclusion:

The IPB120P04P4L03ATMA1 from Infineon Technologies is a robust and efficient N-channel MOSFET that offers high current handling, low on-resistance, and fast switching capabilities. Its versatile design makes it suitable for a wide range of applications in power electronics, making it a valuable component for engineers and designers looking to optimize their circuits for performance and efficiency.

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Contains Lead

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Published

2011

Product Attribute

Factory Lead Time

14 Weeks

REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Published
2011
Factory Lead Time
14 Weeks
Halogen Free
Halogen Free
Packaging
Cut Tape (CT)
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Part Status
Not For New Designs
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Max Junction Temperature (Tj)
175°C
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
FET Type
P-Channel
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs (Max)
±16V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Pulsed Drain Current-Max (IDM)
480A
Input Capacitance (Ciss) (Max) @ Vds
15000pF @ 25V
Mount
Surface Mount
Number Of Pins
3
Terminal Position
SINGLE
Number Of Terminations
2
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reflow Temperature-Max (S)
NOT SPECIFIED
Additional Feature
LOGIC LEVEL COMPATIBLE
Threshold Voltage
-1.7V
Gate To Source Voltage (Vgs)
16V
Drain To Source Breakdown Voltage
-40V
Height
4.7mm
Gate Charge (Qg) (Max) @ Vgs
234nC @ 10V
Fall Time (Typ)
57 ns
Series
OptiMOS™
Avalanche Energy Rating (Eas)
78 mJ
Power Dissipation
136W
Power Dissipation-Max
136W Tc
Manufacturer'S Part No.
IPB120P04P4L03ATMA1
Rds On (Max) @ Id, Vgs
3.1m Ω @ 100A, 10V
Vgs(Th) (Max) @ Id
2.2V @ 340μA
Continuous Drain Current (ID)
-120A
Drain-Source On Resistance-Max
0.0052Ohm
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Turn On Delay Time
21 ns
Number Of Channels
1
Number Of Elements
1
Rise Time
16ns
Turn-Off Delay Time
85 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Drain To Source Voltage (Vdss)
40V
Max Dual Supply Voltage
-40V

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What is IPB120P04P4L03ATMA1?

IPB120P04P4L03ATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IPB120P04P4L03ATMA1?

IPB120P04P4L03ATMA1 is listed with package reference TO263. The current product description is MOSFET P-CH 40V 120A TO263-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IPB120P04P4L03ATMA1 available in stock?

This page currently shows 87335 units in stock and 47598 units available for IPB120P04P4L03ATMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IPB120P04P4L03ATMA1 by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for IPB120P04P4L03ATMA1?

Yes. This page links to the datasheet for IPB120P04P4L03ATMA1 by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

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