Supply original SIR836DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay

MOSFET N-CH 40V 21A PPAK SO-8

RoHS
Datasheet
Supply original SIR836DP-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo

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Part Number

SIR836DP-T1-GE3

Internal code

TCE000050389

Package

2010

Manufacturer

Vishay

Key specifications

Serise

TrenchFET®

Min Quantity

1

Description

MOSFET N-CH 40V 21A PPAK SO-8

key Attributes

-

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Product overview

Overview

MOSFET N-CH 40V 21A PPAK SO-8

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Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Turn-Off Delay Time

17 ns

Product Parameter

Number Of Channels

1

Product Parameter

Number Of Elements

1

Product Parameter

Turn On Delay Time

14 ns

Product Parameter

Configuration

SINGLE WITH BUILT-IN DIODE

Product Parameter

Rise Time

19ns

Turn-Off Delay Time
17 ns
Number Of Channels
1
Number Of Elements
1
Turn On Delay Time
14 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Rise Time
19ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Published
2010
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Manufacturer
Vishay
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Terminal Form
C BEND
Weight
506.605978mg
Nominal Vgs
1.2 V
Series
TrenchFET®
Vgs(Th) (Max) @ Id
2.5V @ 250μA
Package / Case
PowerPAK® SO-8
Contact Plating
Tin
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
5
Number Of Pins
8
Pin Count
8
Gate To Source Voltage (Vgs)
20V
Pulsed Drain Current-Max (IDM)
50A
Drain To Source Breakdown Voltage
40V
Fall Time (Typ)
11 ns
Power Dissipation
3.9W
Gate Charge (Qg) (Max) @ Vgs
18nC @ 10V
Current - Continuous Drain (Id) @ 25°C
21A Tc
Continuous Drain Current (ID)
21A
Power Dissipation-Max
3.9W Ta 15.6W Tc
Input Capacitance (Ciss) (Max) @ Vds
600pF @ 20V
Manufacturer'S Part No.
SIR836DP-T1-GE3
Resistance
22.5MOhm
Rds On (Max) @ Id, Vgs
19m Ω @ 10A, 10V
Avalanche Energy Rating (Eas)
5 mJ
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
JESD-30 Code
R-XDSO-C5
ECCN Code
EAR99

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What is SIR836DP-T1-GE3?

SIR836DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SIR836DP-T1-GE3?

SIR836DP-T1-GE3 is listed with package reference 2010. The current product description is MOSFET N-CH 40V 21A PPAK SO-8, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SIR836DP-T1-GE3 available in stock?

This page currently shows 11304 units in stock and 10030 units available for SIR836DP-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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