Supply original AUIRFR5305, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET P-CH 55V 31A DPAK

RoHS
Datasheet
Supply original AUIRFR5305, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

AUIRFR5305

Internal code

TCE000049913

Package

TO-252-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET P-CH 55V 31A DPAK

key Attributes

-

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Product overview

Overview

MOSFET P-CH 55V 31A DPAK

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Detailed Specifications

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Product Parameter

Rise Time

66ns

Product Parameter

Number Of Elements

1

Product Parameter

Turn On Delay Time

14 ns

Product Parameter

Turn-Off Delay Time

39 ns

Product Parameter

Drain To Source Voltage (Vdss)

55V

Export Classifications & Environmental

JESD-609 Code

e3

Rise Time
66ns
Number Of Elements
1
Turn On Delay Time
14 ns
Turn-Off Delay Time
39 ns
Drain To Source Voltage (Vdss)
55V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Mounting Type
Surface Mount
Published
2006
Factory Lead Time
26 Weeks
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Height
2.39mm
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
FET Type
P-Channel
Subcategory
Other Transistors
Power Dissipation
110W
Power Dissipation-Max
110W Tc
Additional Feature
AVALANCHE RATED
Length
6.73mm
Input Capacitance (Ciss) (Max) @ Vds
1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C
31A Tc
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Fall Time (Typ)
63 ns
Avalanche Energy Rating (Eas)
280 mJ
Reflow Temperature-Max (S)
30
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Gate To Source Voltage (Vgs)
20V
Drive Voltage (Max Rds On,Min Rds On)
10V
Resistance
65mOhm
Rds On (Max) @ Id, Vgs
65m Ω @ 16A, 10V
Drain To Source Breakdown Voltage
-55V
Threshold Voltage
-2V
Continuous Drain Current (ID)
31A
Manufacturer'S Part No.
AUIRFR5305

Common questions

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What is AUIRFR5305?

AUIRFR5305 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for AUIRFR5305?

AUIRFR5305 is listed with package reference TO-252-3. The current product description is MOSFET P-CH 55V 31A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is AUIRFR5305 available in stock?

This page currently shows 85316 units in stock and 58516 units available for AUIRFR5305. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for AUIRFR5305 by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for AUIRFR5305?

Yes. This page links to the datasheet for AUIRFR5305 by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

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