Supply original IRF520NSPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 100V 9.7A D2PAK

RoHS
Datasheet
Supply original IRF520NSPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRF520NSPBF

Internal code

TCE000049532

Package

TO-263-3

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 100V 9.7A D2PAK

key Attributes

-

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Product overview

Overview

MOSFET N-CH 100V 9.7A D2PAK

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Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Number Of Elements

1

Product Parameter

Turn-Off Delay Time

32 ns

Product Parameter

Turn On Delay Time

4.5 ns

Product Parameter

Rise Time

23ns

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Number Of Elements
1
Turn-Off Delay Time
32 ns
Turn On Delay Time
4.5 ns
Rise Time
23ns
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Mounting Type
Surface Mount
Min Operating Temperature
-55°C
Published
2004
Part Status
Discontinued
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Vgs(Th) (Max) @ Id
4V @ 250μA
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation
48W
Input Capacitance (Ciss) (Max) @ Vds
330pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Resistance
200mOhm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Reflow Temperature-Max (S)
30
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Gate To Source Voltage (Vgs)
20V
Max Operating Temperature
175°C
Voltage - Rated DC
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Height
4.826mm
Drain To Source Breakdown Voltage
100V
Threshold Voltage
4V
Length
10.668mm
Recovery Time
150 ns
Width
10.16mm
Fall Time (Typ)
23 ns
Power Dissipation-Max
3.8W Ta 48W Tc
Current - Continuous Drain (Id) @ 25°C
9.7A Tc
Current Rating
9.7A
Continuous Drain Current (ID)
9.7A
Manufacturer'S Part No.
IRF520NSPBF
Rds On (Max) @ Id, Vgs
200m Ω @ 5.7A, 10V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99

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What is IRF520NSPBF?

IRF520NSPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF520NSPBF?

IRF520NSPBF is listed with package reference TO-263-3. The current product description is MOSFET N-CH 100V 9.7A D2PAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRF520NSPBF available in stock?

This page currently shows 59669 units in stock and 26049 units available for IRF520NSPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for IRF520NSPBF?

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