Supply original SI2308BDS-T1-E3, Transistors - FETs, MOSFETs - Single, by Vishay

MOSFET N-CH 60V 2.3A SOT23-3

RoHS
Datasheet
Supply original SI2308BDS-T1-E3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo

Pictures are for reference only. Please contact us for the latest pictures.

Part Number

SI2308BDS-T1-E3

Internal code

TCE000048004

Package

SOT23

Manufacturer

Vishay

Key specifications

Serise

TrenchFET®

Min Quantity

1

Description

MOSFET N-CH 60V 2.3A SOT23-3

key Attributes

-

View datasheet

Technical document

Open The Official Datasheet

Review the latest datasheet for SI2308BDS-T1-E3 from Vishay in a separate tab so engineers and buyers can check package, electrical characteristics, and application details without leaving this product page.

View datasheet

Why request a quote

Use the RFQ step to confirm the commercial and documentation details buyers usually need before placing an order.

Confirm stock and lead-time expectations
Check CoC or traceability support
Align inspection and fulfillment details

Trust signals

Globally recognized certifications

4 certifications

Visible certifications work best when they are paired with clear operational promises around traceability, handling, and inspection.

ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

Authenticity Verification

CoC Available on Request

Pre-Shipment Inspection

Responsive RFQ Support

Why buyers trust this sourcing flow

Our quality workflow is designed to reduce counterfeit risk and support confident procurement. Components are reviewed through documented handling and inspection steps so buyers can evaluate sourcing with stronger authenticity controls.

Structured product content

Review The Product The Way Buyers Actually Evaluate It

Jump between overview, specs, and related sourcing content without scanning one long uninterrupted page.

Product overview

Overview

MOSFET N-CH 60V 2.3A SOT23-3

Full technical breakdown

Detailed Specifications

Review grouped attributes and parameters without scanning one oversized table.

Fast scan

Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Mounting Type

Surface Mount

Product Attribute

Published

2003

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2003
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Manufacturer
Vishay
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs(Th) (Max) @ Id
3V @ 250μA
Package / Case
TO-236-3, SC-59, SOT-23-3
Subcategory
FET General Purpose Powers
Series
TrenchFET®
Height
1.12mm
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Pin Count
3
Drain To Source Breakdown Voltage
60V
Gate To Source Voltage (Vgs)
20V
Number Of Terminations
3
Width
1.4mm
Fall Time (Typ)
16 ns
Length
3.04mm
Threshold Voltage
1V
Weight
1.437803g
Continuous Drain Current (ID)
1.9A
Gate Charge (Qg) (Max) @ Vgs
6.8nC @ 10V
Manufacturer'S Part No.
SI2308BDS-T1-E3
Resistance
156MOhm
Current - Continuous Drain (Id) @ 25°C
2.3A Tc
Rds On (Max) @ Id, Vgs
156m Ω @ 1.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds
190pF @ 30V
Power Dissipation-Max
1.09W Ta 1.66W Tc
Power Dissipation
1.09W
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Turn-Off Delay Time
10 ns
Number Of Channels
1
Number Of Elements
1
Rise Time
16ns
Turn On Delay Time
4 ns

Common questions

Product FAQ

Quick answers for buyers reviewing SI2308BDS-T1-E3, stock, documentation, and sourcing steps.

What is SI2308BDS-T1-E3?

SI2308BDS-T1-E3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SI2308BDS-T1-E3?

SI2308BDS-T1-E3 is listed with package reference SOT23. The current product description is MOSFET N-CH 60V 2.3A SOT23-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SI2308BDS-T1-E3 available in stock?

This page currently shows 57981 units in stock and 46248 units available for SI2308BDS-T1-E3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for SI2308BDS-T1-E3?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SI2308BDS-T1-E3 by Vishay. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for SI2308BDS-T1-E3?

Yes. This page links to the datasheet for SI2308BDS-T1-E3 by Vishay, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify SI2308BDS-T1-E3 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for SI2308BDS-T1-E3 before approving the order.

More sourcing insights

Articles