Supply original SI3445DV-T1-E3, Transistors - FETs, MOSFETs - Single, by Vishay

MOSFET P-CH 8V 6-TSOP

RoHS
Datasheet
Supply original SI3445DV-T1-E3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo

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Part Number

SI3445DV-T1-E3

Internal code

TCE000047999

Package

TSOP

Manufacturer

Vishay

Key specifications

Serise

TrenchFET®

Min Quantity

1

Description

MOSFET P-CH 8V 6-TSOP

key Attributes

-

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Product overview

Overview

MOSFET P-CH 8V 6-TSOP

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Detailed Specifications

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Turn-Off Delay Time
110 ns
Number Of Channels
1
Number Of Elements
1
Turn On Delay Time
20 ns
Rise Time
50ns
Dual Supply Voltage
-8V
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Termination
SMD/SMT
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Published
2013
Element Configuration
Single
Manufacturer
Vishay
Package / Case
SOT-23-6 Thin, TSOT-23-6
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Vgs(Th) (Max) @ Id
1V @ 250μA
Series
TrenchFET®
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Pin Count
6
Vgs (Max)
±8V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Gate To Source Voltage (Vgs)
8V
Height
1mm
Resistance
42MOhm
Length
3.05mm
Power Dissipation
2W
Nominal Vgs
-1 V
Threshold Voltage
-1V
Fall Time (Typ)
60 ns
Pulsed Drain Current-Max (IDM)
20A
Gate Charge (Qg) (Max) @ Vgs
25nC @ 4.5V
Weight
19.986414mg
Width
1.65mm
Continuous Drain Current (ID)
5.6A
Power Dissipation-Max
2W Ta
Rds On (Max) @ Id, Vgs
42m Ω @ 5.6A, 4.5V
Drain To Source Breakdown Voltage
-8V
Input Capacitance
3.15nF
Manufacturer'S Part No.
SI3445DV-T1-E3

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What is SI3445DV-T1-E3?

SI3445DV-T1-E3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SI3445DV-T1-E3?

SI3445DV-T1-E3 is listed with package reference TSOP. The current product description is MOSFET P-CH 8V 6-TSOP, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SI3445DV-T1-E3 available in stock?

This page currently shows 19986 units in stock and 14995 units available for SI3445DV-T1-E3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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