Supply original IRF6717MTR1PBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 25V 38A DIRECTFET

RoHS
Datasheet
Supply original IRF6717MTR1PBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRF6717MTR1PBF

Internal code

TCE000045551

Package

-

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 25V 38A DIRECTFET

key Attributes

-

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Technical document

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Product overview

Overview

MOSFET N-CH 25V 38A DIRECTFET

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

MATTE TIN

Product Parameter

Number Of Elements

1

Product Parameter

Rise Time

37ns

Product Parameter

Turn-Off Delay Time

19 ns

Product Parameter

Dual Supply Voltage

25V

Product Parameter

Turn On Delay Time

25 ns

Terminal Finish
MATTE TIN
Number Of Elements
1
Rise Time
37ns
Turn-Off Delay Time
19 ns
Dual Supply Voltage
25V
Turn On Delay Time
25 ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
RoHS Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-XBCC-N3
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Packaging
Tape & Reel (TR)
Published
2009
Part Status
Obsolete
Termination
SMD/SMT
Peak Reflow Temperature (Cel)
260
Element Configuration
Single
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Operating Temperature
-40°C~150°C TJ
Avalanche Energy Rating (Eas)
290 mJ
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Nominal Vgs
1.8 V
Threshold Voltage
1.8V
Gate To Source Voltage (Vgs)
20V
Terminal Position
BOTTOM
Number Of Terminations
3
Number Of Pins
7
Drain To Source Breakdown Voltage
25V
Fall Time (Typ)
15 ns
Width
5.05mm
Continuous Drain Current (ID)
38A
Power Dissipation
96W
Rds On (Max) @ Id, Vgs
1.25m Ω @ 38A, 10V
Gate Charge (Qg) (Max) @ Vgs
69nC @ 4.5V
Resistance
1.25MOhm
Vgs(Th) (Max) @ Id
2.35V @ 150μA
Length
5.45mm
Current - Continuous Drain (Id) @ 25°C
38A Ta 200A Tc
Input Capacitance (Ciss) (Max) @ Vds
6750pF @ 13V
Pulsed Drain Current-Max (IDM)
300A
Recovery Time
41 ns
Height
533.4μm
Power Dissipation-Max
2.8W Ta 96W Tc
Package / Case
DirectFET™ Isometric MX
Manufacturer'S Part No.
IRF6717MTR1PBF

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IRF6717MTR1PBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

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IRF6717MTR1PBF is listed with package reference -. The current product description is MOSFET N-CH 25V 38A DIRECTFET, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

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