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Request evaluation samplesIRLL2705TRPBF Transistors - FETs, MOSFETs - Single by Infineon Technologies
IRLL2705TRPBF is a Transistors - FETs, MOSFETs - Single model from Infineon Technologies, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to SOT223 under the Infineon Technologies brand listing. MOSFET N-CH 55V 3.8A SOT223. TrustCompo combines the available model, brand, hierarchy, and specification details around IRLL2705TRPBF so buyers can move faster from review to quotation.
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Datasheet
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Key specifications
Series
HEXFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 55V 3.8A SOT223
key Attributes
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Datasheet
View IRLL2705TRPBF DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
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ESD Control
Electrostatic handling standards to help protect sensitive components.
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Product overview
Overview
The IRLL2705TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for high-efficiency power management applications, making it suitable for a variety of uses in both consumer and industrial electronics.
Key Features:
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N-Channel Configuration: The IRLL2705TRPBF is an N-channel MOSFET, which means it uses electrons as the charge carriers. This configuration typically offers lower on-resistance and higher efficiency compared to P-channel MOSFETs.
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Voltage Rating: The device has a maximum drain-source voltage (V_DS) rating of 30V, making it suitable for low to medium voltage applications.
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Current Rating: It can handle a continuous drain current (I_D) of up to 60A, which allows it to manage significant power loads effectively.
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On-Resistance: The on-resistance (R_DS(on)) is typically low, around 0.025 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing overall efficiency.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 1V to 2.5V, which allows for easy driving with standard logic levels.
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Package Type: The IRLL2705TRPBF is available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.
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Fast Switching Speed: The device is designed for fast switching applications, making it ideal for use in power supplies, motor drivers, and other applications where rapid on/off switching is required.
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Thermal Characteristics: The MOSFET has a maximum junction temperature (T_J) of 175°C, allowing it to operate in demanding thermal environments.
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RoHS Compliance: The IRLL2705TRPBF is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring that it is free from certain hazardous materials.
Applications:
The IRLL2705TRPBF is widely used in various applications, including:
- Power Management Circuits: Ideal for DC-DC converters and power supplies.
- Motor Control: Suitable for driving motors in industrial and consumer applications.
- Load Switching: Can be used for switching loads in various electronic devices.
- LED Drivers: Effective in controlling LED lighting systems.
Conclusion:
The IRLL2705TRPBF from Infineon Technologies is a versatile and efficient N-channel MOSFET that meets the demands of modern electronic applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a reliable choice for engineers looking to optimize power management in their designs.
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Popular Specs Surfaced First
Product Parameter
Terminal Finish
Matte Tin (Sn)
Product Parameter
Number Of Channels
1
Product Parameter
Number Of Elements
1
Product Parameter
Turn-Off Delay Time
35 ns
Product Parameter
Dual Supply Voltage
55V
Product Parameter
Turn On Delay Time
6.2 ns
Terminal Finish
Matte Tin (Sn)
Number Of Channels
1
Number Of Elements
1
Turn-Off Delay Time
35 ns
Dual Supply Voltage
55V
Turn On Delay Time
6.2 ns
Rise Time
12ns
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Published
1997
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Package / Case
TO-261-4, TO-261AA
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Vgs (Max)
±16V
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Voltage - Rated DC
55V
Nominal Vgs
2 V
Vgs(Th) (Max) @ Id
2V @ 250μA
Gate Charge (Qg) (Max) @ Vgs
48nC @ 10V
Length
6.6802mm
Power Dissipation-Max
1W Ta
Reflow Temperature-Max (S)
30
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
4
Additional Feature
LOGIC LEVEL COMPATIBLE
Power Dissipation
2.1W
Width
6.7mm
Height
1.8mm
Drain To Source Breakdown Voltage
55V
Gate To Source Voltage (Vgs)
16V
Input Capacitance (Ciss) (Max) @ Vds
870pF @ 25V
Threshold Voltage
2V
Resistance
40mOhm
Manufacturer'S Part No.
IRLL2705TRPBF
Current Rating
3.8A
Continuous Drain Current (ID)
3.8A
Recovery Time
88 ns
Drain Current-Max (Abs) (ID)
5.2A
Rds On (Max) @ Id, Vgs
40m Ω @ 3.8A, 10V
Fall Time (Typ)
22 ns
Current - Continuous Drain (Id) @ 25°C
3.8A Ta
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
JESD-30 Code
R-PDSO-G4
ECCN Code
EAR99
Common questions
Product FAQ
Quick answers for buyers reviewing IRLL2705TRPBF, stock, documentation, and sourcing steps.
What is IRLL2705TRPBF?
IRLL2705TRPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for IRLL2705TRPBF?
IRLL2705TRPBF is listed with package reference SOT223. The current product description is MOSFET N-CH 55V 3.8A SOT223, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is IRLL2705TRPBF available in stock?
This page currently shows 81482 units in stock and 15154 units available for IRLL2705TRPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for IRLL2705TRPBF?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRLL2705TRPBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for IRLL2705TRPBF?
Yes. This page links to the datasheet for IRLL2705TRPBF by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify IRLL2705TRPBF before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for IRLL2705TRPBF before approving the order.
Transistors - FETs, MOSFETs - Single
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