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Request evaluation samplesIRFR9024NTRPBF Transistors - FETs, MOSFETs - Single by Infineon Technologies
IRFR9024NTRPBF is a Transistors - FETs, MOSFETs - Single model from Infineon Technologies, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to TO-252-3 under the Infineon Technologies brand listing. MOSFET P-CH 55V 11A DPAK. TrustCompo combines the available model, brand, hierarchy, and specification details around IRFR9024NTRPBF so buyers can move faster from review to quotation.
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Datasheet
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Key specifications
Series
HEXFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET P-CH 55V 11A DPAK
key Attributes
-
Datasheet
View IRFR9024NTRPBF DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
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ESD Control
Electrostatic handling standards to help protect sensitive components.
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Product overview
Overview
The IRFR9024NTRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for high-efficiency power management applications, making it suitable for a variety of uses in both consumer and industrial electronics.
Key Features:
- Type: N-channel MOSFET
- Package: The IRFR9024NTRPBF is typically housed in a TO-220 package, which is a standard package for power devices, providing good thermal performance and ease of mounting.
- Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 40V, allowing it to handle a wide range of applications without risk of breakdown.
- Current Rating: It can handle a continuous drain current (I_D) of up to 60A, making it suitable for high-power applications.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.025 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing efficiency.
- Gate Threshold Voltage (V_GS(th)): The threshold voltage is typically between 2V to 4V, which allows for easy driving with standard logic levels.
- Switching Speed: The IRFR9024NTRPBF features fast switching capabilities, which is essential for applications such as DC-DC converters, motor drives, and other switching power supplies.
- Thermal Characteristics: The device has a maximum junction temperature (T_j) of 175°C, which provides a good thermal margin for high-temperature applications. The TO-220 package also allows for effective heat dissipation.
- Applications: Common applications include power management in computers, automotive systems, and industrial equipment, as well as in renewable energy systems like solar inverters.
Electrical Characteristics:
- Gate-Source Voltage (V_GS): ±20V maximum
- Body Diode Characteristics: The IRFR9024NTRPBF includes an intrinsic body diode, which can conduct current in the reverse direction, making it useful in applications requiring freewheeling diodes.
Compliance and Standards:
The IRFR9024NTRPBF is compliant with RoHS (Restriction of Hazardous Substances) standards, ensuring that it is free from certain hazardous materials, making it environmentally friendly.
Conclusion:
The IRFR9024NTRPBF from Infineon Technologies is a robust and efficient N-channel MOSFET that is well-suited for a variety of high-power applications. Its combination of high current handling, low on-resistance, and fast switching capabilities makes it a popular choice among engineers and designers looking to optimize power management in their electronic systems.
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Popular Specs Surfaced First
Product Parameter
Turn On Delay Time
13 ns
Product Parameter
Number Of Channels
1
Product Parameter
Time@Peak Reflow Temperature-Max (S)
30
Product Parameter
Number Of Elements
1
Product Parameter
Dual Supply Voltage
55V
Product Parameter
Rise Time
55ns
Turn On Delay Time
13 ns
Number Of Channels
1
Time@Peak Reflow Temperature-Max (S)
30
Number Of Elements
1
Dual Supply Voltage
55V
Rise Time
55ns
Turn-Off Delay Time
23 ns
Part Status
Active
Mounting Type
Surface Mount
Factory Lead Time
12 Weeks
Published
2004
Packaging
Tape & Reel (TR)
Termination
SMD/SMT
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Lead Free
Contains Lead, Lead Free
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Nominal Vgs
-4 V
Threshold Voltage
-4V
Fall Time (Typ)
37 ns
Pulsed Drain Current-Max (IDM)
44A
Voltage - Rated DC
-55V
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Gate To Source Voltage (Vgs)
20V
Drive Voltage (Max Rds On,Min Rds On)
10V
Length
6.7056mm
Drain To Source Breakdown Voltage
-55V
Power Dissipation
38W
Height
2.52mm
Input Capacitance (Ciss) (Max) @ Vds
350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Manufacturer'S Part No.
IRFR9024NTRPBF
Continuous Drain Current (ID)
-11A
Avalanche Energy Rating (Eas)
62 mJ
Current Rating
-11A
Resistance
175mOhm
Rds On (Max) @ Id, Vgs
175m Ω @ 6.6A, 10V
Current - Continuous Drain (Id) @ 25°C
11A Tc
Recovery Time
71 ns
Power Dissipation-Max
38W Tc
JESD-609 Code
e3
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
Moisture Sensitivity Level (MSL)
1 (Unlimited)
JESD-30 Code
R-PSSO-G2
ECCN Code
EAR99
Common questions
Product FAQ
Quick answers for buyers reviewing IRFR9024NTRPBF, stock, documentation, and sourcing steps.
What is IRFR9024NTRPBF?
IRFR9024NTRPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for IRFR9024NTRPBF?
IRFR9024NTRPBF is listed with package reference TO-252-3. The current product description is MOSFET P-CH 55V 11A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is IRFR9024NTRPBF available in stock?
This page currently shows 17839 units in stock and 34396 units available for IRFR9024NTRPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for IRFR9024NTRPBF?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IRFR9024NTRPBF by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for IRFR9024NTRPBF?
Yes. This page links to the datasheet for IRFR9024NTRPBF by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify IRFR9024NTRPBF before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for IRFR9024NTRPBF before approving the order.
Transistors - FETs, MOSFETs - Single
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