Supply original STB140NF75T4, Transistors - FETs, MOSFETs - Single, by STMicroelectronics

Supply original STB140NF75T4, Transistors - FETs, MOSFETs - Single, by STMicroelectronics | TrustCompo Electronic

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Part Number
STB140NF75T4
Internal code
TCE000012851
Package
-
Serise
STripFET™ III
key Attributes
-
Description
MOSFET N-CH 75V 120A D2PAK
Min Quantity
1
Manufacturer
STMicroelectronics
Category
Discrete Semiconductor Products
Sub Categroy
Transistors - FETs, MOSFETs - Single
Datasheet
-

Availability

In Stock378,644
Avaliable141,403

Price Range

QualityUnit Price
1
10
30
100
500
1,000

Due to different local policies, please contact us for the latest quotation.

Certified Quality Assurance
Responsive 24/7 Support
Free Shipping & Sample Provision
30-Day Return Policy

We are ISO 9001, AS 9120B, IOS 14001 certified, ensuring that our quality management system meets international standards. This certification guarantees that every electronic component we supply is authentic, reliable, and traceable. Our dedicated inspection team conducts rigorous quality checks to prevent counterfeit products and reduce failure rates. By adhering to these stringent quality controls, we provide our customers with peace of mind and products they can trust.

Product Attribute

Contact Plating
Tin
Part Status
Active
Radiation Hardening
NO
Number of Terminations
2
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Mount
Surface Mount
Number of Pins
3
Pin Count
3
Factory Lead Time
12 Weeks
Reflow Temperature-Max (s)
30
Packaging
Tape & Reel (TR)
Height
4.6mm
Termination
SMD/SMT
Width
9.35mm
Terminal Form
GULL WING
Length
10.4mm
Gate to Source Voltage (Vgs)
20V
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Element Configuration
Single
Fall Time (Typ)
90 ns
Peak Reflow Temperature (Cel)
245
Threshold Voltage
4V
Drive Voltage (Max Rds On,Min Rds On)
10V
Voltage - Rated DC
75V
Drain to Source Breakdown Voltage
75V
Manufacturer
STMicroelectronics
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(th) (Max) @ Id
4V @ 250μA
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Additional Feature
AVALANCHE RATED
Resistance
7.5mOhm
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
218nC @ 10V
Base Part Number
STB140N
Manufacturer's Part No.
STB140NF75T4
Input Capacitance (Ciss) (Max) @ Vds
5000pF @ 25V
Power Dissipation
310W
Continuous Drain Current (ID)
120A
Current Rating
120A
Series
STripFET™ III
Power Dissipation-Max
310W Tc
Rds On (Max) @ Id, Vgs
7.5m Ω @ 70A, 10V
Pulsed Drain Current-Max (IDM)
480A
Avalanche Energy Rating (Eas)
750 mJ

Export Classifications & Environmental

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095

Product Parameter

Number of Elements
1
Turn-Off Delay Time
130 ns
Turn On Delay Time
30 ns
Dual Supply Voltage
75V
Rise Time
140ns

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