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BSS169H6327XTSA1 Transistors - FETs, MOSFETs - Single by Infineon Technologies

BSS169H6327XTSA1 is a Transistors - FETs, MOSFETs - Single model from Infineon Technologies, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to SOT23 under the Infineon Technologies brand listing. MOSFET N-CH 100V 170MA SOT23. TrustCompo combines the available model, brand, hierarchy, and specification details around BSS169H6327XTSA1 so buyers can move faster from review to quotation.

RoHS
Datasheet
BSS169H6327XTSA1 Transistors - FETs, MOSFETs - Single by Infineon Technologies | TrustCompo
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Part Number

BSS169H6327XTSA1

Internal code

TCE000117130

Package

SOT23

Key specifications

Series

SIPMOS®

Min Quantity

1

Description

MOSFET N-CH 100V 170MA SOT23

key Attributes

-

Technical document

Open The Official Datasheet

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Globally recognized certifications

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ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

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Product overview

Overview

The BSS169H6327XTSA1 is a N-channel enhancement mode field-effect transistor (FET) manufactured by Infineon Technologies. It is designed for general-purpose switching applications in various electronic circuits, offering high performance and reliability.

Key Features:

  1. Enhancement Mode: The BSS169H6327XTSA1 operates in the enhancement mode, which means it requires a positive voltage applied to the gate terminal to allow current flow between the source and drain terminals. This mode of operation simplifies circuit design and ensures low power consumption when the transistor is off.
  2. Low On-State Resistance: With a low on-state resistance (RDS(ON)), this transistor minimizes power dissipation and voltage drop across the device when it is conducting. This feature enables efficient power management and helps to reduce losses in switching circuits.
  3. High Switching Speed: The BSS169H6327XTSA1 offers fast switching times, allowing for rapid transitions between on and off states. This characteristic is essential for applications requiring high-speed switching, such as switching power supplies, motor control circuits, and LED drivers.
  4. Low Threshold Voltage: It has a low threshold voltage (VGS(th)), which determines the gate-source voltage required to turn the transistor on. A low threshold voltage ensures compatibility with low-voltage control signals and enables the transistor to operate efficiently in low-power applications.
  5. High Voltage Capability: This transistor can withstand relatively high drain-source voltage (VDS) levels, making it suitable for use in circuits where high voltage ratings are required. It provides robust performance and reliable operation in demanding applications.
  6. Small Form Factor: The BSS169H6327XTSA1 is available in a small surface-mount package, allowing for compact and space-efficient circuit designs. Its small form factor is advantageous in applications where board space is limited or where miniaturization is desired.

Applications:

  • Switching circuits
  • Power management
  • LED lighting
  • Battery management systems
  • Motor control
  • Audio amplifiers
  • Interface circuits
  • Voltage regulators

The BSS169H6327XTSA1 transistor from Infineon Technologies is a versatile and reliable component suitable for a wide range of switching applications. With its enhancement mode operation, low on-state resistance, high switching speed, low threshold voltage, high voltage capability, and small form factor, it provides engineers with an excellent solution for achieving efficient and high-performance circuit designs.

 

 

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Popular Specs Surfaced First

Product Parameter

Turn On Delay Time

2.9 ns

Product Parameter

Number Of Elements

1

Product Parameter

Rise Time

2.7ns

Product Parameter

Turn-Off Delay Time

11 ns

Product Parameter

FET Feature

Depletion Mode

Product Parameter

Max Dual Supply Voltage

100V

Turn On Delay Time
2.9 ns
Number Of Elements
1
Rise Time
2.7ns
Turn-Off Delay Time
11 ns
FET Feature
Depletion Mode
Max Dual Supply Voltage
100V
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.21.0095
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2011
Packaging
Tape & Reel (TR)
Factory Lead Time
10 Weeks
Halogen Free
Halogen Free
Terminal Position
DUAL
Terminal Form
GULL WING
Element Configuration
Single
Power Dissipation
360mW
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Series
SIPMOS®
Package / Case
TO-236-3, SC-59, SOT-23-3
Subcategory
FET General Purpose Powers
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Pin Count
3
Length
2.9mm
Gate To Source Voltage (Vgs)
20V
Height
1mm
Number Of Terminations
3
Width
1.3mm
Drain-Source On Resistance-Max
6Ohm
Drive Voltage (Max Rds On,Min Rds On)
0V 10V
Current - Continuous Drain (Id) @ 25°C
170mA Ta
Continuous Drain Current (ID)
170mA
Rds On (Max) @ Id, Vgs
6 Ω @ 170mA, 10V
Power Dissipation-Max
360mW Ta
Feedback Cap-Max (Crss)
7 pF
Manufacturer'S Part No.
BSS169H6327XTSA1
Input Capacitance (Ciss) (Max) @ Vds
68pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
2.8nC @ 7V
Vgs(Th) (Max) @ Id
1.8V @ 50μA

Common questions

Product FAQ

Quick answers for buyers reviewing BSS169H6327XTSA1, stock, documentation, and sourcing steps.

What is BSS169H6327XTSA1?

BSS169H6327XTSA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for BSS169H6327XTSA1?

BSS169H6327XTSA1 is listed with package reference SOT23. The current product description is MOSFET N-CH 100V 170MA SOT23, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is BSS169H6327XTSA1 available in stock?

This page currently shows 43277 units in stock and 11009 units available for BSS169H6327XTSA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for BSS169H6327XTSA1?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for BSS169H6327XTSA1 by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for BSS169H6327XTSA1?

Yes. This page links to the datasheet for BSS169H6327XTSA1 by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify BSS169H6327XTSA1 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for BSS169H6327XTSA1 before approving the order.

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