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IPB80N03S4L02ATMA1 Transistors - FETs, MOSFETs - Single by Infineon Technologies
IPB80N03S4L02ATMA1 is a Transistors - FETs, MOSFETs - Single model from Infineon Technologies, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to TO263 under the Infineon Technologies brand listing. MOSFET N-CH 30V 80A TO263-3. TrustCompo combines the available model, brand, hierarchy, and specification details around IPB80N03S4L02ATMA1 so buyers can move faster from review to quotation.
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Datasheet
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Part Number
IPB80N03S4L02ATMA1
Internal code
TCE000107851
Package
TO263
Manufacturer
Infineon TechnologiesKey specifications
Series
OptiMOS™
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 30V 80A TO263-3
key Attributes
-
Datasheet
View IPB80N03S4L02ATMA1 DatasheetTechnical document
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Why request a quote
Use the RFQ step to confirm the commercial and documentation details buyers usually need before placing an order.
RoHS, REACH, and lead-free documentation can be confirmed during RFQ
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Pre-shipment inspection report support for quality review
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
Environmental management discipline across warehouse and operating workflows.
ESD Control
Electrostatic handling standards to help protect sensitive components.
Ordering workflow
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Product overview
Overview
MOSFET N-CH 30V 80A TO263-3
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Popular Specs Surfaced First
Export Classifications & Environmental
JESD-609 Code
e3
Export Classifications & Environmental
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Export Classifications & Environmental
RoHS Status
ROHS3 Compliant
Export Classifications & Environmental
JESD-30 Code
R-PSSO-G2
Export Classifications & Environmental
HTSUS
8541.29.0095
Export Classifications & Environmental
ECCN Code
EAR99
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Turn-Off Delay Time
62 ns
Number Of Elements
1
Turn On Delay Time
14 ns
Rise Time
9ns
Configuration
SINGLE WITH BUILT-IN DIODE
Max Dual Supply Voltage
30V
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Published
2007
Factory Lead Time
16 Weeks
Packaging
Tape & Reel (TR)
Halogen Free
Halogen Free
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs (Max)
±16V
Mount
Surface Mount
Number Of Pins
3
Terminal Position
SINGLE
Number Of Terminations
2
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reflow Temperature-Max (S)
NOT SPECIFIED
Fall Time (Typ)
13 ns
Avalanche Energy Rating (Eas)
260 mJ
Additional Feature
ULTRA LOW RESISTANCE
Gate To Source Voltage (Vgs)
16V
Continuous Drain Current (ID)
80A
Current - Continuous Drain (Id) @ 25°C
80A Tc
Series
OptiMOS™
Gate Charge (Qg) (Max) @ Vgs
140nC @ 10V
HTS Code
8541.29.00.95
Drain-Source On Resistance-Max
0.0024Ohm
Power Dissipation-Max
136W Tc
Rds On (Max) @ Id, Vgs
2.4m Ω @ 80A, 10V
Input Capacitance (Ciss) (Max) @ Vds
9750pF @ 25V
Vgs(Th) (Max) @ Id
2.2V @ 90μA
Manufacturer'S Part No.
IPB80N03S4L02ATMA1
Common questions
Product FAQ
Quick answers for buyers reviewing IPB80N03S4L02ATMA1, stock, documentation, and sourcing steps.
What is IPB80N03S4L02ATMA1?
IPB80N03S4L02ATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for IPB80N03S4L02ATMA1?
IPB80N03S4L02ATMA1 is listed with package reference TO263. The current product description is MOSFET N-CH 30V 80A TO263-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is IPB80N03S4L02ATMA1 available in stock?
This page currently shows 10814 units in stock and 10720 units available for IPB80N03S4L02ATMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for IPB80N03S4L02ATMA1?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IPB80N03S4L02ATMA1 by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for IPB80N03S4L02ATMA1?
Yes. This page links to the datasheet for IPB80N03S4L02ATMA1 by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify IPB80N03S4L02ATMA1 before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for IPB80N03S4L02ATMA1 before approving the order.
Transistors - FETs, MOSFETs - Single
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