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SIR873DP-T1-GE3 Transistors - FETs, MOSFETs - Single by Vishay
SIR873DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single model from Vishay, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. MOSFET P-CH 150V 37A POWERPAKSO. TrustCompo combines the available model, brand, hierarchy, and specification details around SIR873DP-T1-GE3 so buyers can move faster from review to quotation.
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Datasheet
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Documentation support
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Key specifications
Series
TrenchFET® Gen IV
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET P-CH 150V 37A POWERPAKSO
key Attributes
-
Datasheet
View SIR873DP-T1-GE3 DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
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ISO 14001
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ESD Control
Electrostatic handling standards to help protect sensitive components.
Ordering workflow
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Product overview
Overview
The SIR873DP-T1-GE3 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay, designed for a variety of applications including power management, switching, and amplification.
Key Features:
- Type: N-channel MOSFET
- Package: The device is housed in a DPAK (TO-252) package, which is a surface-mount type that provides efficient thermal performance and is suitable for automated assembly processes.
- Voltage Rating: The SIR873DP-T1-GE3 typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
- Current Rating: It can handle a continuous drain current (I_D) of approximately 60A, which allows it to manage significant power loads effectively.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically around 8.5 mΩ at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation and enhances efficiency.
- Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 1V to 2.5V, allowing for easy drive with standard logic levels.
- Thermal Resistance: The device features a low thermal resistance, which aids in heat dissipation, making it suitable for high-efficiency applications.
- Switching Speed: The SIR873DP-T1-GE3 is designed for fast switching, which is beneficial in applications requiring rapid on/off control, such as in power supplies and motor drivers.
Applications:
- Power Management: Ideal for DC-DC converters, power supplies, and battery management systems.
- Motor Control: Suitable for driving motors in various applications, including automotive and industrial systems.
- Load Switching: Can be used in load switching applications where efficient control of power delivery is required.
Additional Information:
- RoHS Compliant: The SIR873DP-T1-GE3 is compliant with the Restriction of Hazardous Substances (RoHS) directive, making it environmentally friendly.
- Reliability: Vishay is known for its high-quality semiconductor products, and this MOSFET is designed to provide reliable performance in demanding environments.
Overall, the SIR873DP-T1-GE3 is a versatile and efficient N-channel MOSFET suitable for a wide range of electronic applications, providing excellent performance characteristics that meet the needs of modern power electronics.
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Popular Specs Surfaced First
Product Attribute
Part Status
Active
Product Attribute
ECCN
EAR99
Product Attribute
Mounting Type
Surface Mount
Product Attribute
Factory Lead Time
14 Weeks
Product Attribute
Packaging
Tape & Reel (TR)
Product Attribute
Terminal Position
DUAL
Part Status
Active
ECCN
EAR99
Mounting Type
Surface Mount
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Reach Compliance Code
not_compliant
Max Junction Temperature (Tj)
150°C
Manufacturer
Vishay
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Vgs(Th) (Max) @ Id
4V @ 250μA
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Gate Charge (Qg) (Max) @ Vgs
48nC @ 10V
Package / Case
PowerPAK® SO-8
Height
1.12mm
Surface Mount
YES
Number Of Terminations
5
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Pulsed Drain Current-Max (IDM)
50A
Drive Voltage (Max Rds On,Min Rds On)
10V
Drain To Source Breakdown Voltage
-150V
Avalanche Energy Rating (Eas)
80 mJ
Continuous Drain Current (ID)
-9A
Power Dissipation
6.25W
Drain Current-Max (Abs) (ID)
37A
Power Dissipation-Max
104W Tc
Current - Continuous Drain (Id) @ 25°C
37A Tc
Manufacturer'S Part No.
SIR873DP-T1-GE3
Series
TrenchFET® Gen IV
Drain-Source On Resistance-Max
0.0475Ohm
Rds On (Max) @ Id, Vgs
47.5m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds
1805pF @ 75V
Manufacturer Package Identifier
S17-0173_SINGLE
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-F5
Terminal Finish
Matte Tin (Sn)
Number Of Channels
1
Number Of Elements
1
Drain To Source Voltage (Vdss)
150V
Turn On Delay Time
15 ns
Configuration
SINGLE WITH BUILT-IN DIODE
Turn-Off Delay Time
28 ns
Common questions
Product FAQ
Quick answers for buyers reviewing SIR873DP-T1-GE3, stock, documentation, and sourcing steps.
What is SIR873DP-T1-GE3?
SIR873DP-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for SIR873DP-T1-GE3?
SIR873DP-T1-GE3 is listed with package reference -. The current product description is MOSFET P-CH 150V 37A POWERPAKSO, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is SIR873DP-T1-GE3 available in stock?
This page currently shows 23668 units in stock and 19884 units available for SIR873DP-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for SIR873DP-T1-GE3?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SIR873DP-T1-GE3 by Vishay. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for SIR873DP-T1-GE3?
Yes. This page links to the datasheet for SIR873DP-T1-GE3 by Vishay, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify SIR873DP-T1-GE3 before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for SIR873DP-T1-GE3 before approving the order.
Transistors - FETs, MOSFETs - Single
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