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SI2369DS-T1-GE3 Transistors - FETs, MOSFETs - Single by Vishay
SI2369DS-T1-GE3 is a Transistors - FETs, MOSFETs - Single model from Vishay, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to TO-236 under the Vishay brand listing. MOSFET P-CH 30V 7.6A TO-236. TrustCompo combines the available model, brand, hierarchy, and specification details around SI2369DS-T1-GE3 so buyers can move faster from review to quotation.
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Datasheet
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Documentation support
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Key specifications
Series
TrenchFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET P-CH 30V 7.6A TO-236
key Attributes
-
Datasheet
View SI2369DS-T1-GE3 DatasheetTechnical document
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ISO 9001
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ESD Control
Electrostatic handling standards to help protect sensitive components.
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Product overview
Overview
The SI2369DS-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. This component is designed for high-efficiency switching applications and is particularly suitable for power management in various electronic devices.
Key Features:
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N-Channel Configuration: The SI2369DS-T1-GE3 is an N-channel MOSFET, which means it uses electrons as the charge carriers, providing better conductivity and efficiency compared to P-channel devices.
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Voltage Rating: It typically has a maximum drain-source voltage (V_DS) rating of around 30V, making it suitable for low to medium voltage applications.
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Current Rating: The device can handle a continuous drain current (I_D) of approximately 10A, which allows it to manage significant power loads in various circuits.
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R_DS(on): The on-resistance (R_DS(on)) is low, typically around 10 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing overall efficiency.
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Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is usually in the range of 1V to 2.5V, allowing for easy drive with low-voltage control signals.
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Package Type: The SI2369DS-T1-GE3 is housed in a compact SO-8 (Small Outline 8-lead) package, which is suitable for surface mount technology (SMT). This package design helps save space on printed circuit boards (PCBs) and facilitates efficient thermal management.
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Thermal Characteristics: The device has good thermal performance, with a maximum junction temperature (T_J) rating of 150°C, allowing it to operate reliably in various environmental conditions.
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Applications: This MOSFET is commonly used in applications such as DC-DC converters, load switching, power management systems, and motor control circuits. Its efficiency and compact size make it ideal for use in consumer electronics, automotive systems, and industrial equipment.
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RoHS Compliance: The SI2369DS-T1-GE3 is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring that it is free from certain hazardous materials, making it environmentally friendly.
Summary:
The SI2369DS-T1-GE3 from Vishay is a versatile and efficient N-channel MOSFET that excels in power management applications. Its low on-resistance, high current handling capability, and compact packaging make it a popular choice for engineers looking to optimize performance in electronic designs.
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Popular Specs Surfaced First
Product Attribute
Part Status
Active
Product Attribute
REACH Status
REACH Unaffected
Product Attribute
ECCN
EAR99
Product Attribute
Mounting Type
Surface Mount
Product Attribute
Factory Lead Time
14 Weeks
Product Attribute
Packaging
Tape & Reel (TR)
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Published
2015
Max Junction Temperature (Tj)
150°C
Manufacturer
Vishay
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Package / Case
TO-236-3, SC-59, SOT-23-3
Series
TrenchFET®
Vgs(Th) (Max) @ Id
2.5V @ 250μA
Height
1.12mm
Gate Charge (Qg) (Max) @ Vgs
36nC @ 10V
Reflow Temperature-Max (S)
30
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Gate To Source Voltage (Vgs)
20V
Number Of Terminations
3
Power Dissipation
1.25W
Drain To Source Breakdown Voltage
-30V
Threshold Voltage
-1.2V
Power Dissipation-Max
1.25W Ta 2.5W Tc
Drain-Source On Resistance-Max
0.029Ohm
Input Capacitance (Ciss) (Max) @ Vds
1295pF @ 15V
Current - Continuous Drain (Id) @ 25°C
7.6A Tc
Drain Current-Max (Abs) (ID)
7.6A
Continuous Drain Current (ID)
-5.4A
Rds On (Max) @ Id, Vgs
29m Ω @ 5.4A, 10V
Manufacturer'S Part No.
SI2369DS-T1-GE3
Turn On Delay Time
13 ns
Number Of Channels
1
Number Of Elements
1
Drain To Source Voltage (Vdss)
30V
Configuration
SINGLE WITH BUILT-IN DIODE
Turn-Off Delay Time
38 ns
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
Common questions
Product FAQ
Quick answers for buyers reviewing SI2369DS-T1-GE3, stock, documentation, and sourcing steps.
What is SI2369DS-T1-GE3?
SI2369DS-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for SI2369DS-T1-GE3?
SI2369DS-T1-GE3 is listed with package reference TO-236. The current product description is MOSFET P-CH 30V 7.6A TO-236, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is SI2369DS-T1-GE3 available in stock?
This page currently shows 91946 units in stock and 49065 units available for SI2369DS-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for SI2369DS-T1-GE3?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SI2369DS-T1-GE3 by Vishay. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for SI2369DS-T1-GE3?
Yes. This page links to the datasheet for SI2369DS-T1-GE3 by Vishay, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify SI2369DS-T1-GE3 before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for SI2369DS-T1-GE3 before approving the order.
Transistors - FETs, MOSFETs - Single
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