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Request evaluation samplesFDD18N20LZ Transistors - FETs, MOSFETs - Single by ON Semiconductor
FDD18N20LZ is a Transistors - FETs, MOSFETs - Single model from ON Semiconductor, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to TO-252-3 under the ON Semiconductor brand listing. MOSFET N-CH 200V DPAK-3. TrustCompo combines the available model, brand, hierarchy, and specification details around FDD18N20LZ so buyers can move faster from review to quotation.
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Datasheet
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Documentation support
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Key specifications
Series
UniFET™
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 200V DPAK-3
key Attributes
-
Datasheet
View FDD18N20LZ DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
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ESD Control
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Product overview
Overview
The FDD18N20LZ is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency power switching applications, making it suitable for various uses in power management, motor control, and other electronic circuits.
Key Features:
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Voltage Rating: The FDD18N20LZ has a maximum drain-source voltage (V_DS) of 200V, which allows it to handle high-voltage applications effectively.
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Current Rating: It can handle a continuous drain current (I_D) of up to 18A, making it capable of driving substantial loads.
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R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.1 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation, enhancing overall efficiency.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which allows for easy interfacing with low-voltage control signals.
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Package Type: The FDD18N20LZ is typically housed in a TO-220 package, which provides good thermal performance and allows for easy mounting on heat sinks for effective heat dissipation.
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Thermal Characteristics: The device has a maximum junction temperature (T_J) rating of 150°C, which provides a robust operating range for various applications.
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Fast Switching Speed: The FDD18N20LZ is designed for fast switching applications, which is beneficial in reducing switching losses in high-frequency applications.
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Applications: Common applications include power supplies, DC-DC converters, motor drivers, and other power management systems where efficient switching is critical.
Electrical Characteristics:
- Gate-Source Voltage (V_GS): ±20V maximum
- Drain-Source Breakdown Voltage (V(BR)DSS): 200V minimum
- Total Gate Charge (Q_g): Typically around 30nC, which indicates the amount of charge required to turn the MOSFET on and off.
Summary:
The FDD18N20LZ from ON Semiconductor is a versatile and efficient N-channel MOSFET suitable for a wide range of power applications. Its high voltage and current ratings, combined with low on-resistance and fast switching capabilities, make it an excellent choice for designers looking to optimize performance in power electronics. The TO-220 package ensures good thermal management, making it a reliable component in demanding environments.
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Popular Specs Surfaced First
Product Attribute
Part Status
Active
Product Attribute
Lead Free
Lead Free
Product Attribute
Mounting Type
Surface Mount
Product Attribute
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Product Attribute
Factory Lead Time
4 Weeks
Product Attribute
Packaging
Tape & Reel (TR)
Part Status
Active
Lead Free
Lead Free
Mounting Type
Surface Mount
Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Factory Lead Time
4 Weeks
Packaging
Tape & Reel (TR)
Terminal Form
GULL WING
Published
2013
Element Configuration
Single
Manufacturer
ON Semiconductor
Height
2.39mm
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
JEDEC-95 Code
TO-252AA
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Pulsed Drain Current-Max (IDM)
64A
Length
6.73mm
Drive Voltage (Max Rds On,Min Rds On)
5V 10V
Vgs(Th) (Max) @ Id
2.5V @ 250μA
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Number Of Terminations
2
Width
6.22mm
Gate To Source Voltage (Vgs)
20V
Continuous Drain Current (ID)
16A
Current - Continuous Drain (Id) @ 25°C
16A Tc
Drain To Source Breakdown Voltage
200V
Weight
260.37mg
Gate Charge (Qg) (Max) @ Vgs
40nC @ 10V
Resistance
125MOhm
Series
UniFET™
Fall Time (Typ)
50 ns
Power Dissipation
89W
Power Dissipation-Max
89W Tc
Manufacturer'S Part No.
FDD18N20LZ
Input Capacitance (Ciss) (Max) @ Vds
1575pF @ 25V
Rds On (Max) @ Id, Vgs
125m Ω @ 8A, 10V
JESD-609 Code
e3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
JESD-30 Code
R-PSSO-G2
ECCN Code
EAR99
Number Of Elements
1
Turn On Delay Time
15 ns
Rise Time
20ns
Turn-Off Delay Time
135 ns
Common questions
Product FAQ
Quick answers for buyers reviewing FDD18N20LZ, stock, documentation, and sourcing steps.
What is FDD18N20LZ?
FDD18N20LZ is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for FDD18N20LZ?
FDD18N20LZ is listed with package reference TO-252-3. The current product description is MOSFET N-CH 200V DPAK-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is FDD18N20LZ available in stock?
This page currently shows 94506 units in stock and 63821 units available for FDD18N20LZ. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for FDD18N20LZ?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDD18N20LZ by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for FDD18N20LZ?
Yes. This page links to the datasheet for FDD18N20LZ by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify FDD18N20LZ before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FDD18N20LZ before approving the order.
Transistors - FETs, MOSFETs - Single
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