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Request evaluation samplesMX30LF1208AA-TI Memory by Macronix
MX30LF1208AA-TI is a Memory model from Macronix, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Integrated Circuits (ICs) / Memory product path. IC FLASH 512M PARALLEL 48TSOP. TrustCompo combines the available model, brand, hierarchy, and specification details around MX30LF1208AA-TI so buyers can move faster from review to quotation.
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Key specifications
Series
MX30LF
Min Quantity
1
Category
Integrated Circuits (ICs)Sub Category
MemoryDescription
IC FLASH 512M PARALLEL 48TSOP
key Attributes
-
Datasheet
View MX30LF1208AA-TI DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
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AS9120B
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ISO 14001
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ESD Control
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Product overview
Overview
GENERAL
The MX29F022T/B is a 2-mega bit Flash memory organized as 256K bytes of 8 bits only. MXICs Flash memories offer the most cost-effective and reliable read/ write non-volatile random access memory.
The MX29F022T/B is packaged in 32-pin PDIP, PLCC and 32-pin TSOP(I). It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers.
The standard MX29F022T/B offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29F022T/B has separate chip enable (CE) and output enable (OE) controls.MXICs Flash memories augment EPROM functionality with in-circuit electrical erasure and programming.
The MX29F022T/B uses a command register to manage this functionality.
The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility.MXICs Flash technology reliably stores memory contents even after 100,000 erase and program cycles.
The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combina tion of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling.
The MX29F022T/ B uses a 5.0V ± 10% VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms.
The highest degree of latch-up protection is achieved with MXICs proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.
FEATURES
• 262,144x 8 only
• Fast access time: 55/70/90/120ns
• Low power consumption - 30mA maximum active current - 1uA typical standby current@5MHz
• Programming and erasing voltage 5V±10%
• Command register architecture - Byte Programming (7us typical)- Sector Erase (16K-Byte x1, 8K-Byte x 2, 32K-Byte x1, and 64K-Byte x 3)
• Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors or the whole chip with Erase Suspend capability. - Automatically programs and verifies data at specified address
• Erase Suspend/Erase Resume - Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation.
• Status Reply - Data polling & Toggle bit for detection of program and erase cycle completion.
• Chip protect/unprotect for 5V only system or 5V/12V system
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1 to VCC+1V
• Boot Code Sector Architecture - T = Top Boot Sector - B = Bottom Boot Sector
• Hardware RESET pin - Resets internal state machine to read mode
• Low VCC write inhibit is equal to or less than 3.2V
• Package type: - 32-pin PDIP - 32-pin PLCC - 32-pin TSOP (Type 1)
• 20 years data retention
The MX29F022T/B is a 2-mega bit Flash memory organized as 256K bytes of 8 bits only. MXICs Flash memories offer the most cost-effective and reliable read/ write non-volatile random access memory.
The MX29F022T/B is packaged in 32-pin PDIP, PLCC and 32-pin TSOP(I). It is designed to be reprogrammed and erased in-system or in-standard EPROM programmers.
The standard MX29F022T/B offers access time as fast as 55ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29F022T/B has separate chip enable (CE) and output enable (OE) controls.MXICs Flash memories augment EPROM functionality with in-circuit electrical erasure and programming.
The MX29F022T/B uses a command register to manage this functionality.
The command register allows for 100% TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility.MXICs Flash technology reliably stores memory contents even after 100,000 erase and program cycles.
The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combina tion of advanced tunnel oxide processing and low internal electric fields for erase and programming operations produces reliable cycling.
The MX29F022T/ B uses a 5.0V ± 10% VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms.
The highest degree of latch-up protection is achieved with MXICs proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on address and data pin from -1V to VCC + 1V.
FEATURES
• 262,144x 8 only
• Fast access time: 55/70/90/120ns
• Low power consumption - 30mA maximum active current - 1uA typical standby current@5MHz
• Programming and erasing voltage 5V±10%
• Command register architecture - Byte Programming (7us typical)- Sector Erase (16K-Byte x1, 8K-Byte x 2, 32K-Byte x1, and 64K-Byte x 3)
• Auto Erase (chip & sector) and Auto Program - Automatically erase any combination of sectors or the whole chip with Erase Suspend capability. - Automatically programs and verifies data at specified address
• Erase Suspend/Erase Resume - Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation.
• Status Reply - Data polling & Toggle bit for detection of program and erase cycle completion.
• Chip protect/unprotect for 5V only system or 5V/12V system
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1 to VCC+1V
• Boot Code Sector Architecture - T = Top Boot Sector - B = Bottom Boot Sector
• Hardware RESET pin - Resets internal state machine to read mode
• Low VCC write inhibit is equal to or less than 3.2V
• Package type: - 32-pin PDIP - 32-pin PLCC - 32-pin TSOP (Type 1)
• 20 years data retention
Fast scan
Popular Specs Surfaced First
Memory
Page Size
2Kwords
Export Classifications & Environmental
JESD-609 Code
e3
Export Classifications & Environmental
RoHS Status
ROHS3 Compliant
Export Classifications & Environmental
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Export Classifications & Environmental
HTSUS
8542.32.0071
Export Classifications & Environmental
JESD-30 Code
R-PDSO-G48
Page Size
2Kwords
JESD-609 Code
e3
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
HTSUS
8542.32.0071
JESD-30 Code
R-PDSO-G48
Terminal Finish
Matte Tin (Sn)
Power Supplies
3/3.3V
Supply Voltage-Min (Vsup)
2.7V
Voltage - Supply
2.7V~3.6V
Supply Current-Max
0.03mA
Programming Voltage
3.3V
Density
512 Mb
Memory Size
512Mb 64M x 8
Packaging
Tray
REACH Status
REACH Unaffected
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
16 Weeks
Categories
Integrated Circuits (ICs)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Published
2013
Qualification Status
Not Qualified
Terminal Pitch
0.5mm
Operating Temperature
-40°C~85°C TA
Part Status
Not For New Designs
Number Of Functions
1
Surface Mount
YES
Reflow Temperature-Max (S)
40
Supply Voltage
3.3V
Operating Supply Voltage
3.6V
Memory Type
Non-Volatile
Number Of Terminations
48
Width
12mm
ECCN
3A991B1A
Length
18.4mm
Memory Interface
Parallel
Sub-Categories
Memory
Ready/Busy
YES
Command User Interface
YES
Package / Case
48-TFSOP (0.724, 18.40mm Width)
Memory Format
FLASH
Memory Width
8
Number Of Sectors/Size
512
Standby Current-Max
0.00005A
Operating Mode
ASYNCHRONOUS
Manufacturer
Macronix
Sector Size
128K
Data Polling
NO
Toggle Bit
NO
Write Cycle Time - Word, Page
30ns
Technology
FLASH - NAND
Series
MX30LF
Access Time (Max)
25 ns
Organization
64MX8
Manufacturer'S Part No.
MX30LF1208AA-TI
Height Seated (Max)
1.2mm
Common questions
Product FAQ
Quick answers for buyers reviewing MX30LF1208AA-TI, stock, documentation, and sourcing steps.
What is MX30LF1208AA-TI?
MX30LF1208AA-TI is a Memory component from Macronix. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for MX30LF1208AA-TI?
MX30LF1208AA-TI is listed with package reference -. The current product description is IC FLASH 512M PARALLEL 48TSOP, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is MX30LF1208AA-TI available in stock?
This page currently shows 28426 units in stock and 28426 units available for MX30LF1208AA-TI. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for MX30LF1208AA-TI?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for MX30LF1208AA-TI by Macronix. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for MX30LF1208AA-TI?
Yes. This page links to the datasheet for MX30LF1208AA-TI by Macronix, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify MX30LF1208AA-TI before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for MX30LF1208AA-TI before approving the order.
Memory
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