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BSS123LT1G Transistors - FETs, MOSFETs - Single by ON Semiconductor

BSS123LT1G is a Transistors - FETs, MOSFETs - Single model from ON Semiconductor, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to SOT-23 under the ON Semiconductor brand listing. MOSFET N-CH 100V 170MA SOT-23. TrustCompo combines the available model, brand, hierarchy, and specification details around BSS123LT1G so buyers can move faster from review to quotation.

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Datasheet
BSS123LT1G Transistors - FETs, MOSFETs - Single by ON Semiconductor | TrustCompo
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Part Number

BSS123LT1G

Internal code

TCE000094910

Package

SOT-23

Manufacturer

ON Semiconductor

Key specifications

Series

-

Min Quantity

1

Description

MOSFET N-CH 100V 170MA SOT-23

key Attributes

-

Technical document

Open The Official Datasheet

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Globally recognized certifications

4 certifications

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ISO 9001

Quality management processes for more consistent sourcing and handling.

AS9120B

Aerospace-focused distribution controls for traceability and reliability.

ISO 14001

Environmental management discipline across warehouse and operating workflows.

ESD Control

Electrostatic handling standards to help protect sensitive components.

Ordering workflow

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Product overview

Overview

The BSS123LT1G is a small-signal N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for use in a wide range of electronic applications requiring low power switching, amplification, or voltage level shifting. The MOSFET is housed in a compact SOT-23 surface-mount package, making it suitable for space-constrained PCB (Printed Circuit Board) designs.

Key Features:

  • N-Channel Enhancement Mode: The BSS123LT1G is an N-channel MOSFET operating in the enhancement mode, meaning it conducts when a positive voltage is applied to its gate terminal.
  • Low Threshold Voltage: With a low threshold voltage, this MOSFET can be easily turned on with a relatively small gate-to-source voltage, making it suitable for low-voltage applications.
  • Low ON-Resistance: The MOSFET exhibits low ON-resistance (RDS(ON)), resulting in minimal conduction losses and efficient power management in switching applications.
  • High Switching Speed: It features fast switching characteristics, allowing for rapid turn-on and turn-off transitions, which is advantageous in high-frequency switching circuits.
  • High Current Handling Capability: Despite its small size, the BSS123LT1G can handle moderate currents, making it suitable for various low-power and medium-power applications.
  • Wide Operating Voltage Range: It supports a wide operating voltage range, enabling compatibility with different voltage levels commonly encountered in electronic systems.
  • ESD Protection: The MOSFET offers electrostatic discharge (ESD) protection, enhancing its robustness and reliability in handling transient voltage events.

Applications:

  • Switching Circuits: Used in electronic switches, relays, and power management circuits for controlling the flow of current or voltage in various applications.
  • Signal Amplification: Employed in signal amplification stages of audio amplifiers, sensor interfaces, and other analog circuitry requiring voltage amplification.
  • Level Shifting: Utilized for voltage level shifting tasks in digital logic circuits, I/O interfaces, and communication protocols to interface between devices operating at different voltage levels.
  • Load Switching: Integrated into load switching circuits for controlling the power supply to loads such as LEDs, motors, solenoids, and other electrical components.
  • Battery Management: Incorporated into battery protection circuits, battery chargers, and power management systems for efficient battery utilization and charging control.
  • LED Drivers: Deployed as part of LED driver circuits to regulate the current flowing through LEDs in lighting applications, display panels, and backlighting systems.
  • Voltage Regulation: Used in voltage regulator circuits to regulate output voltages in power supplies, voltage regulators, and DC-DC converters.

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Popular Specs Surfaced First

Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

REACH SVHC

No SVHC

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

ECCN Code

EAR99

Product Attribute

Part Status

Active

JESD-609 Code
e3
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Part Status
Active
Lead Free
Lead Free
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mounting Type
Surface Mount
Factory Lead Time
15 Weeks
Published
2003
Packaging
Cut Tape (CT)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Manufacturer
ON Semiconductor
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Package / Case
TO-236-3, SC-59, SOT-23-3
Nominal Vgs
20 V
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Pin Count
3
Gate To Source Voltage (Vgs)
20V
Number Of Terminations
3
Voltage - Rated DC
100V
Width
1.4mm
Drive Voltage (Max Rds On,Min Rds On)
10V
Length
3.04mm
Power Dissipation
225mW
Height
1.01mm
Drain To Source Breakdown Voltage
100V
Threshold Voltage
800mV
Resistance
6Ohm
Current - Continuous Drain (Id) @ 25°C
170mA Ta
Continuous Drain Current (ID)
170mA
Current Rating
170mA
Input Capacitance (Ciss) (Max) @ Vds
20pF @ 25V
Power Dissipation-Max
225mW Ta
Rds On (Max) @ Id, Vgs
6 Ω @ 100mA, 10V
Manufacturer'S Part No.
BSS123LT1G
Vgs(Th) (Max) @ Id
2.6V @ 1mA
Number Of Elements
1
Time@Peak Reflow Temperature-Max (S)
40
Turn On Delay Time
20 ns
Turn-Off Delay Time
40 ns

Common questions

Product FAQ

Quick answers for buyers reviewing BSS123LT1G, stock, documentation, and sourcing steps.

What is BSS123LT1G?

BSS123LT1G is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for BSS123LT1G?

BSS123LT1G is listed with package reference SOT-23. The current product description is MOSFET N-CH 100V 170MA SOT-23, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is BSS123LT1G available in stock?

This page currently shows 81568 units in stock and 43579 units available for BSS123LT1G. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for BSS123LT1G?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for BSS123LT1G by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for BSS123LT1G?

Yes. This page links to the datasheet for BSS123LT1G by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify BSS123LT1G before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for BSS123LT1G before approving the order.

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