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Request evaluation samplesSI2319DS-T1-GE3 Transistors - FETs, MOSFETs - Single by Vishay
SI2319DS-T1-GE3 is a Transistors - FETs, MOSFETs - Single model from Vishay, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to SOT23 under the Vishay brand listing. MOSFET P-CH 40V 2.3A SOT23-3. TrustCompo combines the available model, brand, hierarchy, and specification details around SI2319DS-T1-GE3 so buyers can move faster from review to quotation.
RoHS
Datasheet
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Fast RFQ turnaround
Documentation support
Pre-shipment inspection review
Key specifications
Series
TrenchFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET P-CH 40V 2.3A SOT23-3
key Attributes
-
Datasheet
View SI2319DS-T1-GE3 DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
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ESD Control
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Product overview
Overview
MOSFET P-CH 40V 2.3A SOT23-3
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Popular Specs Surfaced First
Product Parameter
Terminal Finish
Matte Tin (Sn)
Product Parameter
Number Of Channels
1
Product Parameter
Time@Peak Reflow Temperature-Max (S)
30
Product Parameter
Number Of Elements
1
Product Parameter
Turn On Delay Time
7 ns
Product Parameter
Turn-Off Delay Time
25 ns
Terminal Finish
Matte Tin (Sn)
Number Of Channels
1
Time@Peak Reflow Temperature-Max (S)
30
Number Of Elements
1
Turn On Delay Time
7 ns
Turn-Off Delay Time
25 ns
Rise Time
15ns
Drain To Source Voltage (Vdss)
40V
Part Status
Active
Mounting Type
Surface Mount
Published
2011
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Terminal Form
GULL WING
Element Configuration
Single
Manufacturer
Vishay
Power Dissipation
750mW
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Vgs(Th) (Max) @ Id
3V @ 250μA
Package / Case
TO-236-3, SC-59, SOT-23-3
Series
TrenchFET®
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Pin Count
3
Gate To Source Voltage (Vgs)
20V
Number Of Terminations
3
Drive Voltage (Max Rds On,Min Rds On)
10V
Fall Time (Typ)
25 ns
Weight
1.437803g
Power Dissipation-Max
750mW Ta
Threshold Voltage
-3V
Nominal Vgs
-3 V
Gate Charge (Qg) (Max) @ Vgs
17nC @ 10V
Rds On (Max) @ Id, Vgs
82m Ω @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds
470pF @ 20V
Current - Continuous Drain (Id) @ 25°C
2.3A Ta
DS Breakdown Voltage-Min
40V
Drain-Source On Resistance-Max
0.082Ohm
Continuous Drain Current (ID)
-2.3A
Manufacturer'S Part No.
SI2319DS-T1-GE3
JESD-609 Code
e3
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Common questions
Product FAQ
Quick answers for buyers reviewing SI2319DS-T1-GE3, stock, documentation, and sourcing steps.
What is SI2319DS-T1-GE3?
SI2319DS-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for SI2319DS-T1-GE3?
SI2319DS-T1-GE3 is listed with package reference SOT23. The current product description is MOSFET P-CH 40V 2.3A SOT23-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is SI2319DS-T1-GE3 available in stock?
This page currently shows 41373 units in stock and 11511 units available for SI2319DS-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for SI2319DS-T1-GE3?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SI2319DS-T1-GE3 by Vishay. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for SI2319DS-T1-GE3?
Yes. This page links to the datasheet for SI2319DS-T1-GE3 by Vishay, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify SI2319DS-T1-GE3 before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for SI2319DS-T1-GE3 before approving the order.
Transistors - FETs, MOSFETs - Single
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