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Request evaluation samplesSupply original IPB107N20N3GATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies
IPB107N20N3GATMA1 is a Transistors - FETs, MOSFETs - Single model from Infineon Technologies, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to TO263 under the Infineon Technologies brand listing. MOSFET N-CH 200V 88A TO263-3. TrustCompo combines the available model, brand, hierarchy, and specification details around IPB107N20N3GATMA1 so buyers can move faster from review to quotation.
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Datasheet
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Documentation support
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Key specifications
Series
OptiMOS™
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 200V 88A TO263-3
key Attributes
-
Datasheet
View IPB107N20N3GATMA1 DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
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ESD Control
Electrostatic handling standards to help protect sensitive components.
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Product overview
Overview
The IPB107N20N3GATMA1 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for applications requiring efficient power management and switching capabilities, making it suitable for a variety of uses in power electronics, including automotive, industrial, and consumer electronics.
Key Features:
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Voltage Rating: The IPB107N20N3GATMA1 has a maximum drain-source voltage (V_DS) of 200V, allowing it to handle high-voltage applications effectively.
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Current Rating: It can support a continuous drain current (I_D) of up to 107A, which makes it capable of managing significant power loads.
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R_DS(on): The on-resistance (R_DS(on)) is exceptionally low, typically around 7.5 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power losses during operation, enhancing overall efficiency.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which allows for easy drive with standard logic levels.
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Package Type: The device is housed in a TO-220 package, which provides good thermal performance and is suitable for mounting on heatsinks, facilitating effective heat dissipation.
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Thermal Resistance: The thermal resistance from junction to case (R_thJC) is low, ensuring that the device can operate at higher temperatures without compromising performance.
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Fast Switching: The IPB107N20N3GATMA1 is designed for fast switching applications, making it ideal for use in switch-mode power supplies (SMPS), DC-DC converters, and motor control applications.
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Robustness: The MOSFET is designed to withstand harsh operating conditions, with built-in protection features against over-voltage and over-current situations.
Applications:
- Power Supplies: Used in high-efficiency power supply designs, including AC-DC converters and DC-DC converters.
- Motor Drives: Suitable for driving electric motors in various applications, including automotive and industrial automation.
- Renewable Energy: Can be utilized in solar inverters and other renewable energy systems for efficient power conversion.
- Consumer Electronics: Employed in power management circuits for devices such as laptops, televisions, and other electronic gadgets.
Conclusion:
The IPB107N20N3GATMA1 from Infineon Technologies is a versatile and efficient N-channel MOSFET that excels in high-voltage and high-current applications. Its low on-resistance, fast switching capabilities, and robust design make it an excellent choice for engineers looking to optimize power management in their electronic designs.
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Popular Specs Surfaced First
Product Parameter
Terminal Finish
Tin (Sn)
Product Parameter
Turn On Delay Time
18 ns
Product Parameter
Number Of Channels
1
Product Parameter
Number Of Elements
1
Product Parameter
Configuration
SINGLE WITH BUILT-IN DIODE
Product Parameter
Rise Time
26ns
Terminal Finish
Tin (Sn)
Turn On Delay Time
18 ns
Number Of Channels
1
Number Of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Rise Time
26ns
Turn-Off Delay Time
41 ns
Part Status
Active
Published
2008
REACH Status
REACH Unaffected
ECCN
EAR99
Mounting Type
Surface Mount
Factory Lead Time
13 Weeks
Packaging
Tape & Reel (TR)
Terminal Form
GULL WING
Reach Compliance Code
not_compliant
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Max Junction Temperature (Tj)
175°C
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Power Dissipation-Max
300W Tc
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
3
Terminal Position
SINGLE
Number Of Terminations
2
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Power Dissipation
300mW
Drive Voltage (Max Rds On,Min Rds On)
10V
Pin Count
4
Drain To Source Breakdown Voltage
200V
Fall Time (Typ)
11 ns
Height
4.7mm
Avalanche Energy Rating (Eas)
560 mJ
Series
OptiMOS™
Gate Charge (Qg) (Max) @ Vgs
87nC @ 10V
Continuous Drain Current (ID)
88A
Current - Continuous Drain (Id) @ 25°C
88A Tc
Vgs(Th) (Max) @ Id
4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds
7100pF @ 100V
Rds On (Max) @ Id, Vgs
10.7m Ω @ 88A, 10V
Manufacturer'S Part No.
IPB107N20N3GATMA1
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Common questions
Product FAQ
Quick answers for buyers reviewing IPB107N20N3GATMA1, stock, documentation, and sourcing steps.
What is IPB107N20N3GATMA1?
IPB107N20N3GATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for IPB107N20N3GATMA1?
IPB107N20N3GATMA1 is listed with package reference TO263. The current product description is MOSFET N-CH 200V 88A TO263-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is IPB107N20N3GATMA1 available in stock?
This page currently shows 21290 units in stock and 36463 units available for IPB107N20N3GATMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for IPB107N20N3GATMA1?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IPB107N20N3GATMA1 by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for IPB107N20N3GATMA1?
Yes. This page links to the datasheet for IPB107N20N3GATMA1 by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify IPB107N20N3GATMA1 before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for IPB107N20N3GATMA1 before approving the order.
Transistors - FETs, MOSFETs - Single
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