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Request evaluation samplesSupply original IPB80P04P4L04ATMA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies
IPB80P04P4L04ATMA1 is a Transistors - FETs, MOSFETs - Single model from Infineon Technologies, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to TO263 under the Infineon Technologies brand listing. MOSFET P-CH TO263-3. TrustCompo combines the available model, brand, hierarchy, and specification details around IPB80P04P4L04ATMA1 so buyers can move faster from review to quotation.
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Part Number
IPB80P04P4L04ATMA1
Internal code
TCE000087091
Package
TO263
Manufacturer
Infineon TechnologiesKey specifications
Series
Automotive, AEC-Q101, OptiMOS™
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET P-CH TO263-3
key Attributes
-
Datasheet
View IPB80P04P4L04ATMA1 DatasheetTechnical document
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Trust signals
Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
Environmental management discipline across warehouse and operating workflows.
ESD Control
Electrostatic handling standards to help protect sensitive components.
Ordering workflow
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Product overview
Overview
The IPB80P04P4L04ATMA1 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for various applications, including power management, motor control, and DC-DC converters, where efficient switching and low on-resistance are critical.
Key Features:
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Voltage Rating: The IPB80P04P4L04ATMA1 has a maximum drain-source voltage (V_DS) of 40V, making it suitable for low-voltage applications.
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Current Rating: It can handle continuous drain currents (I_D) of up to 80A, which allows it to manage significant power loads effectively.
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On-Resistance: One of the standout features of this MOSFET is its low on-resistance (R_DS(on)), typically around 4 mΩ at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power losses during operation, enhancing overall efficiency.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is typically in the range of 1V to 2.5V, allowing for easy drive with standard logic levels.
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Package Type: The IPB80P04P4L04ATMA1 is housed in a TO-220 package, which provides good thermal performance and allows for easy mounting on heatsinks for effective heat dissipation.
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Thermal Resistance: The thermal resistance from junction to case (R_θJC) is low, which helps in maintaining lower operating temperatures during high-load conditions.
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Switching Performance: This MOSFET is optimized for fast switching speeds, making it suitable for high-frequency applications. Its gate charge (Q_g) is also low, which contributes to reduced switching losses.
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Robustness: The device is designed to withstand high levels of stress, with features that protect against over-voltage and over-current conditions.
Applications:
- Power Supply Circuits: Ideal for use in power supplies, where efficient switching is crucial for energy savings.
- Motor Drives: Suitable for driving motors in various applications, including automotive and industrial systems.
- DC-DC Converters: Commonly used in buck and boost converters due to its high efficiency and fast switching capabilities.
- Battery Management Systems: Effective in applications requiring precise control of battery charging and discharging.
Conclusion:
The IPB80P04P4L04ATMA1 from Infineon Technologies is a versatile and efficient N-channel MOSFET that excels in power management applications. Its combination of high current handling, low on-resistance, and robust thermal performance makes it a reliable choice for engineers looking to optimize their designs for efficiency and performance.
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Popular Specs Surfaced First
Export Classifications & Environmental
JESD-609 Code
e3
Export Classifications & Environmental
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Export Classifications & Environmental
RoHS Status
ROHS3 Compliant
Export Classifications & Environmental
JESD-30 Code
R-PSSO-G2
Export Classifications & Environmental
HTSUS
8541.29.0095
Export Classifications & Environmental
ECCN Code
EAR99
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Published
2011
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Length
10mm
Halogen Free
Halogen Free
Terminal Form
GULL WING
Element Configuration
Single
Part Status
Not For New Designs
Case Connection
DRAIN
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Element Material
SILICON
FET Type
P-Channel
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Vgs (Max)
±16V
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Additional Feature
LOGIC LEVEL COMPATIBLE
Gate To Source Voltage (Vgs)
16V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Drain To Source Breakdown Voltage
-40V
Fall Time (Typ)
65 ns
Vgs(Th) (Max) @ Id
2.2V @ 250μA
Height
4.4mm
Power Dissipation
125W
Power Dissipation-Max
125W Tc
Avalanche Energy Rating (Eas)
60 mJ
Input Capacitance (Ciss) (Max) @ Vds
3800pF @ 25V
Width
9.25mm
Drain-Source On Resistance-Max
0.0071Ohm
Series
Automotive, AEC-Q101, OptiMOS™
Gate Charge (Qg) (Max) @ Vgs
176nC @ 10V
Continuous Drain Current (ID)
-80A
Rds On (Max) @ Id, Vgs
4.4m Ω @ 80A, 10V
Manufacturer'S Part No.
IPB80P04P4L04ATMA1
Terminal Finish
Tin (Sn)
Number Of Elements
1
Rise Time
13ns
Drain To Source Voltage (Vdss)
40V
Turn-Off Delay Time
119 ns
Turn On Delay Time
28 ns
Max Dual Supply Voltage
-40V
Common questions
Product FAQ
Quick answers for buyers reviewing IPB80P04P4L04ATMA1, stock, documentation, and sourcing steps.
What is IPB80P04P4L04ATMA1?
IPB80P04P4L04ATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for IPB80P04P4L04ATMA1?
IPB80P04P4L04ATMA1 is listed with package reference TO263. The current product description is MOSFET P-CH TO263-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is IPB80P04P4L04ATMA1 available in stock?
This page currently shows 103230 units in stock and 64372 units available for IPB80P04P4L04ATMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for IPB80P04P4L04ATMA1?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IPB80P04P4L04ATMA1 by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for IPB80P04P4L04ATMA1?
Yes. This page links to the datasheet for IPB80P04P4L04ATMA1 by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify IPB80P04P4L04ATMA1 before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for IPB80P04P4L04ATMA1 before approving the order.
Transistors - FETs, MOSFETs - Single
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