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Request evaluation samplesSupply original FDT86113LZ, Transistors - FETs, MOSFETs - Single, by ON Semiconductor
FDT86113LZ is a Transistors - FETs, MOSFETs - Single model from ON Semiconductor, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to SOT223 under the ON Semiconductor brand listing. MOSFET N-CH 100V 3.3A SOT223. TrustCompo combines the available model, brand, hierarchy, and specification details around FDT86113LZ so buyers can move faster from review to quotation.
RoHS
Datasheet
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Documentation support
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Key specifications
Series
PowerTrench®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 100V 3.3A SOT223
key Attributes
-
Datasheet
View FDT86113LZ DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
Environmental management discipline across warehouse and operating workflows.
ESD Control
Electrostatic handling standards to help protect sensitive components.
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Product overview
Overview
The FDT86113LZ is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for applications requiring efficient power management and switching capabilities.
Key Features:
- Type: N-channel MOSFET
- Package: The FDT86113LZ typically comes in a compact surface-mount package, which allows for efficient thermal management and space-saving on printed circuit boards (PCBs).
- Voltage Rating: It has a maximum drain-source voltage (V_DS) rating, which allows it to handle significant voltage levels, making it suitable for various high-voltage applications.
- Current Rating: The device can handle a substantial continuous drain current (I_D), which is essential for applications that require high power levels.
- R_DS(on): The on-resistance (R_DS(on)) is low, which minimizes power loss during operation and enhances overall efficiency. This characteristic is particularly important in power supply circuits and motor control applications.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is optimized for low-voltage drive applications, allowing for easy interfacing with microcontrollers and other logic devices.
- Switching Speed: The FDT86113LZ features fast switching capabilities, making it suitable for high-frequency applications, such as DC-DC converters and switching power supplies.
Applications:
The FDT86113LZ is commonly used in various applications, including:
- Power management circuits
- DC-DC converters
- Motor drivers
- Load switching
- Battery management systems
Thermal Characteristics:
The device is designed to operate efficiently at elevated temperatures, with a specified maximum junction temperature. Its thermal resistance parameters ensure that it can dissipate heat effectively, which is crucial for maintaining reliability and performance in demanding environments.
Electrical Characteristics:
The datasheet for the FDT86113LZ provides detailed electrical characteristics, including:
- Maximum ratings for voltage, current, and power dissipation
- Typical values for on-resistance and gate charge
- Switching characteristics such as rise time, fall time, and delay times
Conclusion:
The FDT86113LZ from ON Semiconductor is a versatile and efficient N-channel MOSFET that is well-suited for a wide range of power management and switching applications. Its combination of high voltage and current ratings, low on-resistance, and fast switching capabilities make it an excellent choice for engineers looking to optimize their designs for performance and efficiency. For specific applications, it is advisable to consult the detailed datasheet for comprehensive specifications and guidelines.
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Popular Specs Surfaced First
Product Attribute
Part Status
Active
Product Attribute
Lead Free
Lead Free
Product Attribute
Mounting Type
Surface Mount
Product Attribute
Factory Lead Time
8 Weeks
Product Attribute
Published
2011
Product Attribute
Packaging
Tape & Reel (TR)
Part Status
Active
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
8 Weeks
Published
2011
Packaging
Tape & Reel (TR)
Terminal Position
DUAL
Terminal Form
GULL WING
Element Configuration
Single
Manufacturer
ON Semiconductor
Package / Case
TO-261-4, TO-261AA
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs(Th) (Max) @ Id
2.5V @ 250μA
Series
PowerTrench®
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Gate To Source Voltage (Vgs)
20V
Height
1.7mm
Number Of Terminations
4
Number Of Pins
4
Threshold Voltage
1.7V
Width
6.7mm
Drain To Source Breakdown Voltage
100V
Lifecycle Status
ACTIVE (Last Updated: 12 hours ago)
Power Dissipation
2.2W
Feedback Cap-Max (Crss)
5 pF
Length
3.7mm
Weight
250.2mg
Continuous Drain Current (ID)
3.3A
Gate Charge (Qg) (Max) @ Vgs
6.8nC @ 10V
Power Dissipation-Max
2.2W Ta
Current - Continuous Drain (Id) @ 25°C
3.3A Tc
Fall Time (Typ)
1.5 ns
Input Capacitance (Ciss) (Max) @ Vds
315pF @ 50V
Additional Feature
LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
Manufacturer'S Part No.
FDT86113LZ
Rds On (Max) @ Id, Vgs
100m Ω @ 3.3A, 10V
Turn-Off Delay Time
10 ns
Number Of Elements
1
Turn On Delay Time
3.8 ns
Rise Time
1.3ns
JESD-609 Code
e3
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Common questions
Product FAQ
Quick answers for buyers reviewing FDT86113LZ, stock, documentation, and sourcing steps.
What is FDT86113LZ?
FDT86113LZ is a Transistors - FETs, MOSFETs - Single component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for FDT86113LZ?
FDT86113LZ is listed with package reference SOT223. The current product description is MOSFET N-CH 100V 3.3A SOT223, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is FDT86113LZ available in stock?
This page currently shows 182714 units in stock and 69578 units available for FDT86113LZ. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for FDT86113LZ?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for FDT86113LZ by ON Semiconductor. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for FDT86113LZ?
Yes. This page links to the datasheet for FDT86113LZ by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify FDT86113LZ before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FDT86113LZ before approving the order.
Transistors - FETs, MOSFETs - Single
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