Supply original FDN86265P, Transistors - FETs, MOSFETs - Single, by ON Semiconductor

The FDN86265P is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. This device is designed for use in various applications, including power management, load switching, and signal switching.

Key Features:

1. Type: P-Channel MOSFET

   • The FDN86265P is specifically designed to handle negative voltage applications, making it suitable for high-side switching in power management circuits.

2. Voltage Rating:

   • The device typically has a maximum drain-source voltage (V_DS) rating of around -20V, allowing it to operate effectively in low to moderate voltage applications.

3. Current Rating:

   • It can handle continuous drain current (I_D) of approximately -3.5A, which makes it suitable for driving loads in various electronic circuits.

4. R_DS(on):

   • The on-resistance (R_DS(on)) is low, typically around 0.5 ohms at a gate-source voltage (V_GS) of -10V. This low on-resistance contributes to reduced power loss and improved efficiency in applications.

5. Gate Threshold Voltage (V_GS(th)):

   • The gate threshold voltage is typically in the range of -1V to -3V, which indicates the voltage required to turn the MOSFET on. This feature allows for easy interfacing with low-voltage control signals.

6. Package Type:

   • The FDN86265P is available in a compact SOT-23 package, which is ideal for space-constrained applications. The small footprint allows for efficient PCB layout and design.

7. Thermal Characteristics:

   • The device has a thermal resistance that allows it to operate effectively under various thermal conditions, ensuring reliability in high-temperature environments.

8. Applications:

   • Common applications include battery management systems, power distribution, load switching, and other general-purpose switching applications in consumer electronics, automotive, and industrial systems.

Electrical Characteristics:

• Maximum Gate-Source Voltage (V_GS): -20V
• Maximum Power Dissipation (P_D): Typically around 1.5W, depending on the thermal management of the PCB.
• Input Capacitance (C_iss): This parameter is important for determining the switching speed and efficiency of the device.

Conclusion:

The FDN86265P from ON Semiconductor is a versatile P-channel MOSFET that offers a combination of low on-resistance, moderate voltage and current ratings, and a compact package, making it suitable for a wide range of applications in modern electronic designs. Its characteristics make it an excellent choice for engineers looking to implement efficient power management solutions in their projects.