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Request evaluation samplesSupply original STD7N80K5, Transistors - FETs, MOSFETs - Single, by STMicroelectronics
STD7N80K5 is a Transistors - FETs, MOSFETs - Single model from STMicroelectronics, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. Known package information currently points to TO-252-3 under the STMicroelectronics brand listing. MOSFET N-CH 800V 6A DPAK. TrustCompo combines the available model, brand, hierarchy, and specification details around STD7N80K5 so buyers can move faster from review to quotation.
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Datasheet
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Documentation support
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Key specifications
Series
SuperMESH5™
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 800V 6A DPAK
key Attributes
-
Datasheet
View STD7N80K5 DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
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ESD Control
Electrostatic handling standards to help protect sensitive components.
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Product overview
Overview
The STD7N80K5 is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for applications requiring efficient switching and high power handling capabilities. Here’s a detailed description of its key features and specifications:
Key Features:
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Voltage Rating: The STD7N80K5 has a maximum drain-source voltage (V_DS) of 800V, making it suitable for high-voltage applications.
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Current Rating: It can handle a continuous drain current (I_D) of up to 7A at a specified temperature, which allows it to be used in various power applications.
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R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.8 ohms at a gate-source voltage (V_GS) of 10V. This low on-resistance contributes to reduced power losses during operation, enhancing efficiency.
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Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 2V to 4V, which allows for easy driving with standard logic levels.
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Package Type: The STD7N80K5 is typically available in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.
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Thermal Resistance: The thermal resistance from junction to case (R_thJC) is low, allowing for effective heat management during operation.
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Fast Switching: The device is designed for fast switching applications, making it ideal for use in power supplies, motor drivers, and other switching applications.
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Applications: Common applications include switch-mode power supplies (SMPS), inverters, and other high-voltage switching applications where efficiency and reliability are critical.
Electrical Characteristics:
- Maximum Drain-Source Voltage (V_DS): 800V
- Continuous Drain Current (I_D): 7A
- Pulsed Drain Current (I_D, pulsed): Higher than continuous rating, typically specified in the datasheet.
- Gate-Source Voltage (V_GS): ±20V maximum.
- Total Gate Charge (Q_g): Typically specified to indicate how much charge is needed to switch the MOSFET on and off.
Performance:
The STD7N80K5 is characterized by its robust performance in high-voltage environments, making it a reliable choice for engineers designing power electronics. Its low on-resistance and high voltage rating allow for efficient operation, reducing heat generation and improving overall system reliability.
Conclusion:
In summary, the STD7N80K5 from STMicroelectronics is a versatile and efficient N-channel MOSFET suitable for a wide range of high-voltage applications. Its combination of high voltage rating, low on-resistance, and fast switching capabilities makes it an excellent choice for power management solutions in various electronic devices.
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Popular Specs Surfaced First
Product Attribute
Part Status
Active
Product Attribute
REACH Status
REACH Unaffected
Product Attribute
ECCN
EAR99
Product Attribute
Lead Free
Lead Free
Product Attribute
Mounting Type
Surface Mount
Product Attribute
Packaging
Tape & Reel (TR)
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Factory Lead Time
17 Weeks
Terminal Form
GULL WING
Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Element Configuration
Single
Resistance
1.2Ohm
Manufacturer
STMicroelectronics
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Power Dissipation
110W
Power Dissipation-Max
110W Tc
Vgs (Max)
±30V
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Number Of Terminations
2
Height
2.4mm
Width
6.2mm
Drive Voltage (Max Rds On,Min Rds On)
10V
Gate To Source Voltage (Vgs)
30V
Length
6.6mm
Drain Current-Max (Abs) (ID)
6A
Pulsed Drain Current-Max (IDM)
24A
Current - Continuous Drain (Id) @ 25°C
6A Tc
Continuous Drain Current (ID)
6A
Base Part Number
STD7
Fall Time (Typ)
20.2 ns
Vgs(Th) (Max) @ Id
5V @ 100μA
Avalanche Energy Rating (Eas)
88 mJ
DS Breakdown Voltage-Min
800V
Series
SuperMESH5™
Rds On (Max) @ Id, Vgs
1.2 Ω @ 3A, 10V
Manufacturer'S Part No.
STD7N80K5
Input Capacitance (Ciss) (Max) @ Vds
360pF @ 100V
Gate Charge (Qg) (Max) @ Vgs
13.4nC @ 10V
Number Of Elements
1
Turn On Delay Time
11.3 ns
Drain To Source Voltage (Vdss)
800V
Rise Time
8.3ns
Turn-Off Delay Time
23.7 ns
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-30 Code
R-PSSO-G2
HTSUS
8541.29.0095
ECCN Code
EAR99
Common questions
Product FAQ
Quick answers for buyers reviewing STD7N80K5, stock, documentation, and sourcing steps.
What is STD7N80K5?
STD7N80K5 is a Transistors - FETs, MOSFETs - Single component from STMicroelectronics. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for STD7N80K5?
STD7N80K5 is listed with package reference TO-252-3. The current product description is MOSFET N-CH 800V 6A DPAK, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is STD7N80K5 available in stock?
This page currently shows 149458 units in stock and 47064 units available for STD7N80K5. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for STD7N80K5?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for STD7N80K5 by STMicroelectronics. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for STD7N80K5?
Yes. This page links to the datasheet for STD7N80K5 by STMicroelectronics, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify STD7N80K5 before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for STD7N80K5 before approving the order.
Transistors - FETs, MOSFETs - Single
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