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BSC046N10NS3GATMA1 Transistors - FETs, MOSFETs - Single by Infineon Technologies
BSC046N10NS3GATMA1 is a Transistors - FETs, MOSFETs - Single model from Infineon Technologies, presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single product path. MOSFET N-CH 100V 100A TDSON-8. TrustCompo combines the available model, brand, hierarchy, and specification details around BSC046N10NS3GATMA1 so buyers can move faster from review to quotation.
RoHS
Datasheet
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Documentation support
Pre-shipment inspection review
Key specifications
Series
OptiMOS™
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Category
Transistors - FETs, MOSFETs - SingleDescription
MOSFET N-CH 100V 100A TDSON-8
key Attributes
-
Datasheet
View BSC046N10NS3GATMA1 DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
Environmental management discipline across warehouse and operating workflows.
ESD Control
Electrostatic handling standards to help protect sensitive components.
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Product overview
Overview
The BSC046N10NS3GATMA1 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Infineon Technologies. This component is designed for high-efficiency power management applications, making it suitable for a variety of uses in power supplies, motor drives, and other electronic circuits.
Key Features:
- Type: N-channel MOSFET
- Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 100V, allowing it to handle significant voltage levels in various applications.
- Current Rating: It can handle a continuous drain current (I_D) of up to 46A, which makes it capable of managing high power loads.
- R_DS(on): The on-resistance (R_DS(on)) is typically low, around 0.0046 ohms at a gate-source voltage (V_GS) of 10V. This low resistance minimizes power loss during operation, enhancing efficiency.
- Gate Threshold Voltage (V_GS(th)): The gate threshold voltage is typically between 2V and 4V, which indicates the voltage required to turn the MOSFET on.
- Package Type: The BSC046N10NS3GATMA1 is housed in a TO-220 package, which provides good thermal performance and is suitable for heat dissipation in high-power applications.
- Thermal Resistance: The thermal resistance from junction to case (R_θJC) is low, allowing for effective heat management during operation.
- Switching Speed: The device is designed for fast switching applications, making it ideal for use in high-frequency circuits.
Applications:
- Power Supplies: Used in switch-mode power supplies (SMPS) for efficient voltage regulation.
- Motor Control: Suitable for driving motors in various applications, including automotive and industrial systems.
- DC-DC Converters: Commonly used in buck and boost converters for efficient power conversion.
- LED Drivers: Can be utilized in LED lighting applications for efficient current regulation.
Electrical Characteristics:
- Maximum Gate-Source Voltage (V_GS): ±20V
- Maximum Power Dissipation (P_D): Typically around 94W, depending on the thermal management.
- Body Diode Characteristics: The device features an intrinsic body diode, which allows for reverse current flow and can be beneficial in certain applications.
Conclusion:
The BSC046N10NS3GATMA1 from Infineon Technologies is a robust and efficient N-channel MOSFET that is well-suited for a wide range of power management applications. Its high current and voltage ratings, combined with low on-resistance and fast switching capabilities, make it an excellent choice for engineers looking to optimize performance in their electronic designs.
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Popular Specs Surfaced First
Product Parameter
Terminal Finish
Tin (Sn)
Product Parameter
Number Of Elements
1
Product Parameter
Rise Time
14ns
Product Parameter
Configuration
SINGLE WITH BUILT-IN DIODE
Product Parameter
Max Dual Supply Voltage
100V
Product Attribute
REACH Status
REACH Unaffected
Terminal Finish
Tin (Sn)
Number Of Elements
1
Rise Time
14ns
Configuration
SINGLE WITH BUILT-IN DIODE
Max Dual Supply Voltage
100V
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Contains Lead
Mounting Type
Surface Mount
Factory Lead Time
16 Weeks
Published
2005
Part Status
Obsolete
Halogen Free
Halogen Free
Packaging
Cut Tape (CT)
Terminal Position
DUAL
Reach Compliance Code
not_compliant
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs
63nC @ 10V
Pulsed Drain Current-Max (IDM)
400A
Package / Case
8-PowerTDFN
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Pbfree Code
no
Mount
Surface Mount
Number Of Terminations
5
Number Of Pins
8
Pin Count
8
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Drain To Source Breakdown Voltage
100V
Continuous Drain Current (ID)
17A
Series
OptiMOS™
Drain-Source On Resistance-Max
0.0046Ohm
Power Dissipation
156W
Current - Continuous Drain (Id) @ 25°C
17A Ta 100A Tc
Power Dissipation-Max
156W Tc
Rds On (Max) @ Id, Vgs
4.6m Ω @ 50A, 10V
Avalanche Energy Rating (Eas)
350 mJ
Vgs(Th) (Max) @ Id
3.5V @ 120μA
Input Capacitance (Ciss) (Max) @ Vds
4500pF @ 50V
Manufacturer'S Part No.
BSC046N10NS3GATMA1
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PDSO-F5
Common questions
Product FAQ
Quick answers for buyers reviewing BSC046N10NS3GATMA1, stock, documentation, and sourcing steps.
What is BSC046N10NS3GATMA1?
BSC046N10NS3GATMA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for BSC046N10NS3GATMA1?
BSC046N10NS3GATMA1 is listed with package reference -. The current product description is MOSFET N-CH 100V 100A TDSON-8, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is BSC046N10NS3GATMA1 available in stock?
This page currently shows 97002 units in stock and 37135 units available for BSC046N10NS3GATMA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for BSC046N10NS3GATMA1?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for BSC046N10NS3GATMA1 by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for BSC046N10NS3GATMA1?
Yes. This page links to the datasheet for BSC046N10NS3GATMA1 by Infineon Technologies, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify BSC046N10NS3GATMA1 before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for BSC046N10NS3GATMA1 before approving the order.
Transistors - FETs, MOSFETs - Single
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