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Request evaluation samplesIS43DR16640C-3DBLI Memory by Integrated Silicon Solution, Inc. (ISSI)
IS43DR16640C-3DBLI is a Memory model from Integrated Silicon Solution, Inc. (ISSI), presented on TrustCompo for buyers who need clear sourcing and review context before RFQ. This listing sits in the Integrated Circuits (ICs) / Memory product path. IC DRAM 1G PARALLEL 84TWBGA. TrustCompo combines the available model, brand, hierarchy, and specification details around IS43DR16640C-3DBLI so buyers can move faster from review to quotation.
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Datasheet
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Part Number
IS43DR16640C-3DBLI
Internal code
TCE000084713
Package
-
Manufacturer
Integrated Silicon Solution, Inc. (ISSI)Key specifications
Series
-
Min Quantity
1
Category
Integrated Circuits (ICs)Sub Category
MemoryDescription
IC DRAM 1G PARALLEL 84TWBGA
key Attributes
-
Datasheet
View IS43DR16640C-3DBLI DatasheetTechnical document
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Globally recognized certifications
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
Environmental management discipline across warehouse and operating workflows.
ESD Control
Electrostatic handling standards to help protect sensitive components.
Ordering workflow
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Product overview
Overview
FEATURES
• Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
• Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V
• High speed data transfer rates with system frequency up to 933 MHz
• 8 internal banks for concurrent operation
• 8n-Bit pre-fetch architecture
• Programmable CAS Latency
• Programmable Additive Latency: 0, CL-1,CL-2
• Programmable CAS WRITE latency (CWL) based on tCK
• Programmable Burst Length: 4 and 8
• Programmable Burst Sequence: Sequential or Interleave
• BL switch on the fly
• Auto Self Refresh(ASR)
• Self Refresh Temperature(SRT)
• Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
• Partial Array Self Refresh
• Asynchronous RESET pin
• TDQS (Termination Data Strobe) supported (x8 only)
• OCD (Off-Chip Driver Impedance Adjustment)
• Dynamic ODT (On-Die Termination)
• Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
• Write Leveling
• Up to 200 MHz in DLL off mode
• Operating temperature: Commercial (TC = 0°C to +95°C) Industrial (TC = -40°C to +95°C) Automotive, A1 (TC = -40°C to +95°C) Automotive, A2 (TC = -40°C to +105°C)
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Popular Specs Surfaced First
Package Parameter
Height Seated (Max)
1.2mm
Package Parameter
Sequential Burst Length
48
Package Parameter
Interleaved Burst Length
48
Export Classifications & Environmental
RoHS Status
ROHS3 Compliant
Export Classifications & Environmental
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Export Classifications & Environmental
JESD-609 Code
e1
Height Seated (Max)
1.2mm
Sequential Burst Length
48
Interleaved Burst Length
48
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
JESD-609 Code
e1
ECCN Code
EAR99
HTSUS
8542.32.0032
Part Status
Active
Packaging
Tray
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Factory Lead Time
8 Weeks
Categories
Integrated Circuits (ICs)
Peak Reflow Temperature (Cel)
260
Terminal Pitch
0.8mm
Qualification Status
Not Qualified
Operating Temperature
-40°C~85°C TA
Contact Plating
Copper, Silver, Tin
Output Characteristics
3-STATE
Number Of Functions
1
Mount
Surface Mount
Terminal Position
BOTTOM
Number Of Ports
1
Supply Voltage
1.8V
Operating Supply Voltage
1.8V
Length
12.5mm
Reflow Temperature-Max (S)
10
Memory Interface
Parallel
Sub-Categories
Memory
Memory Width
16
Memory Type
Volatile
Number Of Terminations
84
Number Of Pins
84
Operating Mode
SYNCHRONOUS
Organization
64MX16
I/O Type
COMMON
Package / Case
84-TFBGA
Manufacturer
Integrated Silicon Solution, Inc. (ISSI)
Technology
SDRAM - DDR2
Manufacturer'S Part No.
IS43DR16640C-3DBLI
Additional Feature
AUTO/SELF REFRESH
Address Bus Width
13b
Write Cycle Time - Word, Page
15ns
Memory Format
DRAM
Standby Current-Max
0.025A
Data Bus Width
16b
Terminal Finish
TIN SILVER COPPER
Supply Voltage-Min (Vsup)
1.7V
Voltage - Supply
1.7V~1.9V
Density
1 Gb
Memory Size
1Gb 64M x 16
Refresh Cycles
8192
Supply Voltage-Max (Vsup)
1.9V
Supply Current-Max
0.27mA
Access Time
450ps
Max Frequency
333MHz
Common questions
Product FAQ
Quick answers for buyers reviewing IS43DR16640C-3DBLI, stock, documentation, and sourcing steps.
What is IS43DR16640C-3DBLI?
IS43DR16640C-3DBLI is a Memory component from Integrated Silicon Solution, Inc. (ISSI). This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
What package and description are listed for IS43DR16640C-3DBLI?
IS43DR16640C-3DBLI is listed with package reference -. The current product description is IC DRAM 1G PARALLEL 84TWBGA, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is IS43DR16640C-3DBLI available in stock?
This page currently shows 26236 units in stock and 51012 units available for IS43DR16640C-3DBLI. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for IS43DR16640C-3DBLI?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IS43DR16640C-3DBLI by Integrated Silicon Solution, Inc. (ISSI). The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for IS43DR16640C-3DBLI?
Yes. This page links to the datasheet for IS43DR16640C-3DBLI by Integrated Silicon Solution, Inc. (ISSI), so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify IS43DR16640C-3DBLI before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for IS43DR16640C-3DBLI before approving the order.
Memory
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