Supply original FDS6911, Transistors - FETs, MOSFETs - Arrays, by ON Semiconductor

MOSFET 2N-CH 20V 7.5A 8SOIC

RoHS
Datasheet
Supply original FDS6911, Transistors - FETs, MOSFETs - Arrays, by ON Semiconductor | TrustCompo

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Part Number

FDS6911

Internal code

TCE000082432

Package

8SOIC

Manufacturer

ON Semiconductor

Key specifications

Serise

PowerTrench®

Min Quantity

1

Description

MOSFET 2N-CH 20V 7.5A 8SOIC

key Attributes

-

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Product overview

Overview

MOSFET 2N-CH 20V 7.5A 8SOIC

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Detailed Specifications

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Popular Specs Surfaced First

Product Attribute

Part Status

Active

Product Attribute

REACH Status

REACH Unaffected

Product Attribute

ECCN

EAR99

Product Attribute

Lead Free

Lead Free

Product Attribute

Lifecycle Status

ACTIVE (Last Updated: 2 days ago)

Product Attribute

Mounting Type

Surface Mount

Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mounting Type
Surface Mount
Published
2006
Packaging
Tape & Reel (TR)
Factory Lead Time
10 Weeks
Terminal Form
GULL WING
Width
3.9mm
Package / Case
8-SOIC (0.154, 3.90mm Width)
Manufacturer
ON Semiconductor
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Vgs(Th) (Max) @ Id
3V @ 250μA
Series
PowerTrench®
Radiation Hardening
No
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
8
Number Of Terminations
8
Length
4.9mm
Nominal Vgs
1.8 V
Gate To Source Voltage (Vgs)
20V
Current Rating
7.5A
Element Configuration
Dual
Max Power Dissipation
900mW
Power Dissipation
1.6W
Voltage - Rated DC
20V
Fall Time (Typ)
5 ns
Weight
187mg
Sub-Categories
Transistors - FETs, MOSFETs - Arrays
Gate Charge (Qg) (Max) @ Vgs
24nC @ 10V
Drain To Source Breakdown Voltage
20V
Height
1.575mm
FET Type
2 N-Channel (Dual)
Continuous Drain Current (ID)
7.5A
Input Capacitance (Ciss) (Max) @ Vds
1130pF @ 15V
Rds On (Max) @ Id, Vgs
13m Ω @ 7.5A, 10V
Manufacturer'S Part No.
FDS6911
Drain-Source On Resistance-Max
0.013Ohm
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.21.0095
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
FET Technology
METAL-OXIDE SEMICONDUCTOR
Number Of Elements
2
Turn On Delay Time
9 ns
Turn-Off Delay Time
26 ns
Rise Time
5ns
FET Feature
Logic Level Gate

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What is FDS6911?

FDS6911 is a Transistors - FETs, MOSFETs - Arrays component from ON Semiconductor. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for FDS6911?

FDS6911 is listed with package reference 8SOIC. The current product description is MOSFET 2N-CH 20V 7.5A 8SOIC, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is FDS6911 available in stock?

This page currently shows 16790 units in stock and 13953 units available for FDS6911. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for FDS6911?

Yes. This page links to the datasheet for FDS6911 by ON Semiconductor, so engineers and buyers can review package, ratings, and application details before purchase.

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Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for FDS6911 before approving the order.

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