What is SI2301CDS-T1-GE3?
SI2301CDS-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
Supply original SI2301CDS-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay
MOSFET P-CH 20V 3.1A SOT23-3
RoHS
Datasheet
Pictures are for reference only. Please contact us for the latest pictures.
Key specifications
Serise
TrenchFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Categroy
Transistors - FETs, MOSFETs - SingleDescription
MOSFET P-CH 20V 3.1A SOT23-3
key Attributes
-
Technical document
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ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
Environmental management discipline across warehouse and operating workflows.
ESD Control
Electrostatic handling standards to help protect sensitive components.
Authenticity Verification
CoC Available on Request
Pre-Shipment Inspection
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Product overview
Overview
The SI2301CDS-T1-GE3 is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Vishay. This component is designed for a variety of applications, including power management, switching, and amplification in electronic circuits.
Key Features:
- Type: N-channel MOSFET
- Package: The device is typically housed in a small, surface-mount package, specifically the SOT-23 package, which allows for efficient use of space on printed circuit boards (PCBs).
- Voltage Rating: The SI2301CDS-T1-GE3 has a maximum drain-source voltage (V_DS) rating of 20V, making it suitable for low-voltage applications.
- Current Rating: It can handle a continuous drain current (I_D) of up to 3.9A, which provides flexibility in various circuit designs.
- R_DS(on): The on-resistance (R_DS(on)) is low, typically around 0.045 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss and heat generation during operation.
- Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 1V to 2.5V, allowing for efficient switching at lower voltages.
- Thermal Resistance: The device has a low thermal resistance, which helps in managing heat dissipation during operation, enhancing reliability and performance.
- Applications: Common applications include load switching, power management in portable devices, and as a switch in DC-DC converters.
Electrical Characteristics:
- Maximum Gate-Source Voltage (V_GS): ±20V
- Maximum Power Dissipation (P_D): Typically around 1.25W, depending on the thermal conditions.
- Operating Temperature Range: The device can operate in a wide temperature range, typically from -55°C to +150°C, making it suitable for various environmental conditions.
Additional Information:
- RoHS Compliant: The SI2301CDS-T1-GE3 is compliant with the Restriction of Hazardous Substances (RoHS) directive, ensuring it is free from certain hazardous materials.
- Applications: It is widely used in consumer electronics, automotive applications, and industrial equipment due to its reliability and efficiency.
Conclusion:
The SI2301CDS-T1-GE3 from Vishay is a versatile and efficient N-channel MOSFET that is well-suited for a range of low-voltage applications. Its compact size, low on-resistance, and robust electrical characteristics make it an excellent choice for designers looking to optimize performance in their electronic circuits.
Full technical breakdown
Detailed Specifications
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Popular Specs Surfaced First
Export Classifications & Environmental
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Export Classifications & Environmental
RoHS Status
ROHS3 Compliant
Export Classifications & Environmental
REACH SVHC
No SVHC
Export Classifications & Environmental
HTSUS
8541.21.0095
Product Attribute
Part Status
Active
Product Attribute
REACH Status
REACH Unaffected
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.21.0095
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Min Operating Temperature
-55°C
Factory Lead Time
14 Weeks
Packaging
Tape & Reel (TR)
Published
2012
Max Junction Temperature (Tj)
150°C
Element Configuration
Single
Manufacturer
Vishay
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Package / Case
TO-236-3, SC-59, SOT-23-3
Vgs(Th) (Max) @ Id
1V @ 250μA
Series
TrenchFET®
Height
1.12mm
Contact Plating
Tin
Radiation Hardening
No
Mount
Surface Mount
Number Of Pins
3
Vgs (Max)
±8V
Gate To Source Voltage (Vgs)
8V
Drain To Source Breakdown Voltage
-20V
Width
1.4mm
Max Operating Temperature
150°C
Length
3.04mm
Power Dissipation
1.6W
Threshold Voltage
-1V
Fall Time (Typ)
35 ns
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Weight
1.437803g
Gate Charge (Qg) (Max) @ Vgs
10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
405pF @ 10V
Current - Continuous Drain (Id) @ 25°C
3.1A Tc
Power Dissipation-Max
860mW Ta 1.6W Tc
Nominal Vgs
-400 mV
Continuous Drain Current (ID)
-3.1A
Rds On (Max) @ Id, Vgs
112mOhm @ 2.8A, 4.5V
Input Capacitance
405pF
Resistance
112mOhm
Supplier Device Package
SOT-23-3 (TO-236)
Manufacturer'S Part No.
SI2301CDS-T1-GE3
Turn On Delay Time
11 ns
Drain To Source Resistance
90mOhm
Number Of Channels
1
Number Of Elements
1
Drain To Source Voltage (Vdss)
20V
Turn-Off Delay Time
30 ns
Rise Time
35ns
Rds On Max
112 mΩ
Common questions
Product FAQ
Quick answers for buyers reviewing SI2301CDS-T1-GE3, stock, documentation, and sourcing steps.
What package and description are listed for SI2301CDS-T1-GE3?
SI2301CDS-T1-GE3 is listed with package reference SOT23. The current product description is MOSFET P-CH 20V 3.1A SOT23-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is SI2301CDS-T1-GE3 available in stock?
This page currently shows 14431 units in stock and 10101 units available for SI2301CDS-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for SI2301CDS-T1-GE3?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SI2301CDS-T1-GE3 by Vishay. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for SI2301CDS-T1-GE3?
Yes. This page links to the datasheet for SI2301CDS-T1-GE3 by Vishay, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify SI2301CDS-T1-GE3 before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for SI2301CDS-T1-GE3 before approving the order.
Transistors - FETs, MOSFETs - Single
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