Supply original SIA411DJ-T1-E3, Transistors - FETs, MOSFETs - Single, by Vishay

MOSFET P-CH 20V 12A SC70-6

RoHS
Datasheet
Supply original SIA411DJ-T1-E3, Transistors - FETs, MOSFETs - Single, by Vishay | TrustCompo

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Part Number

SIA411DJ-T1-E3

Internal code

TCE000078396

Package

SC70-6

Manufacturer

Vishay

Key specifications

Serise

TrenchFET®

Min Quantity

1

Description

MOSFET P-CH 20V 12A SC70-6

key Attributes

-

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Product overview

Overview

MOSFET P-CH 20V 12A SC70-6

Full technical breakdown

Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Terminal Finish

MATTE TIN

Product Parameter

Number Of Elements

1

Product Parameter

Turn-Off Delay Time

40 ns

Product Parameter

Turn On Delay Time

12 ns

Product Parameter

Rise Time

65ns

Product Attribute

REACH Status

REACH Unaffected

Terminal Finish
MATTE TIN
Number Of Elements
1
Turn-Off Delay Time
40 ns
Turn On Delay Time
12 ns
Rise Time
65ns
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Published
2016
Element Configuration
Single
Manufacturer
Vishay
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Terminal Form
UNSPECIFIED
Vgs(Th) (Max) @ Id
1V @ 250μA
Current - Continuous Drain (Id) @ 25°C
12A Tc
Series
TrenchFET®
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Terminations
6
Number Of Pins
6
Pin Count
6
Vgs (Max)
±8V
Gate To Source Voltage (Vgs)
8V
Nominal Vgs
-1 V
Threshold Voltage
-1V
Continuous Drain Current (ID)
-12A
Pulsed Drain Current-Max (IDM)
20A
Fall Time (Typ)
100 ns
Drain To Source Breakdown Voltage
20V
Power Dissipation-Max
3.5W Ta 19W Tc
Power Dissipation
3.5W
Package / Case
PowerPAK® SC-70-6
Drive Voltage (Max Rds On,Min Rds On)
1.5V 4.5V
Resistance
30MOhm
Gate Charge (Qg) (Max) @ Vgs
38nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds
1200pF @ 10V
Rds On (Max) @ Id, Vgs
30m Ω @ 5.9A, 4.5V
Manufacturer'S Part No.
SIA411DJ-T1-E3
JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH SVHC
Unknown
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99

Common questions

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What is SIA411DJ-T1-E3?

SIA411DJ-T1-E3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for SIA411DJ-T1-E3?

SIA411DJ-T1-E3 is listed with package reference SC70-6. The current product description is MOSFET P-CH 20V 12A SC70-6, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is SIA411DJ-T1-E3 available in stock?

This page currently shows 12669 units in stock and 12669 units available for SIA411DJ-T1-E3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for SIA411DJ-T1-E3?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SIA411DJ-T1-E3 by Vishay. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for SIA411DJ-T1-E3?

Yes. This page links to the datasheet for SIA411DJ-T1-E3 by Vishay, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify SIA411DJ-T1-E3 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for SIA411DJ-T1-E3 before approving the order.

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