What is SIB411DK-T1-GE3?
SIB411DK-T1-GE3 is a Transistors - FETs, MOSFETs - Single component from Vishay. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.
Supply original SIB411DK-T1-GE3, Transistors - FETs, MOSFETs - Single, by Vishay
MOSFET P-CH 20V 9A PPAK SC75-6L
RoHS
Datasheet
Pictures are for reference only. Please contact us for the latest pictures.
Key specifications
Serise
TrenchFET®
Min Quantity
1
Category
Discrete Semiconductor ProductsSub Categroy
Transistors - FETs, MOSFETs - SingleDescription
MOSFET P-CH 20V 9A PPAK SC75-6L
key Attributes
-
Technical document
Open The Official Datasheet
Review the latest datasheet for SIB411DK-T1-GE3 from Vishay in a separate tab so engineers and buyers can check package, electrical characteristics, and application details without leaving this product page.
Why request a quote
Use the RFQ step to confirm the commercial and documentation details buyers usually need before placing an order.
Confirm stock and lead-time expectations
Check CoC or traceability support
Align inspection and fulfillment details
Trust signals
Globally recognized certifications
Visible certifications work best when they are paired with clear operational promises around traceability, handling, and inspection.
ISO 9001
Quality management processes for more consistent sourcing and handling.
AS9120B
Aerospace-focused distribution controls for traceability and reliability.
ISO 14001
Environmental management discipline across warehouse and operating workflows.
ESD Control
Electrostatic handling standards to help protect sensitive components.
Authenticity Verification
CoC Available on Request
Pre-Shipment Inspection
Responsive RFQ Support
Why buyers trust this sourcing flow
Our quality workflow is designed to reduce counterfeit risk and support confident procurement. Components are reviewed through documented handling and inspection steps so buyers can evaluate sourcing with stronger authenticity controls.
Structured product content
Review The Product The Way Buyers Actually Evaluate It
Jump between overview, specs, and related sourcing content without scanning one long uninterrupted page.
Product overview
Overview
MOSFET P-CH 20V 9A PPAK SC75-6L
Full technical breakdown
Detailed Specifications
Review grouped attributes and parameters without scanning one oversized table.
Fast scan
Popular Specs Surfaced First
Product Attribute
REACH Status
REACH Unaffected
Product Attribute
ECCN
EAR99
Product Attribute
Lead Free
Lead Free
Product Attribute
Mounting Type
Surface Mount
Product Attribute
Packaging
Tape & Reel (TR)
Product Attribute
Part Status
Obsolete
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Termination
SMD/SMT
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Published
2016
Element Configuration
Single
Manufacturer
Vishay
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Technology
MOSFET (Metal Oxide)
Sub-Categories
Transistors - FETs, MOSFETs - Single
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
FET Type
P-Channel
Subcategory
Other Transistors
Power Dissipation
2.4W
Vgs(Th) (Max) @ Id
1V @ 250μA
Series
TrenchFET®
Radiation Hardening
No
Reflow Temperature-Max (S)
40
Mount
Surface Mount
Pbfree Code
yes
Number Of Pins
6
Pin Count
6
Vgs (Max)
±8V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Gate To Source Voltage (Vgs)
8V
Drain To Source Breakdown Voltage
-20V
Number Of Terminations
3
Load Capacitance
15pF
Nominal Vgs
-1 V
Fall Time (Typ)
75 ns
Continuous Drain Current (ID)
-9A
Current - Continuous Drain (Id) @ 25°C
9A Tc
Resistance
66mOhm
Package / Case
PowerPAK® SC-75-6L
Power Dissipation-Max
2.4W Ta 13W Tc
Gate Charge (Qg) (Max) @ Vgs
15nC @ 8V
Frequency
156.25MHz
Manufacturer'S Part No.
SIB411DK-T1-GE3
Rds On (Max) @ Id, Vgs
66m Ω @ 3.3A, 4.5V
Frequency Stability
25 ppm
Input Capacitance (Ciss) (Max) @ Vds
470pF @ 10V
Drain Current-Max (Abs) (ID)
4.8A
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
S-XDSO-N3
Turn-Off Delay Time
45 ns
Number Of Elements
1
Dual Supply Voltage
20V
Rise Time
40ns
Common questions
Product FAQ
Quick answers for buyers reviewing SIB411DK-T1-GE3, stock, documentation, and sourcing steps.
What package and description are listed for SIB411DK-T1-GE3?
SIB411DK-T1-GE3 is listed with package reference SC75-. The current product description is MOSFET P-CH 20V 9A PPAK SC75-6L, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.
Is SIB411DK-T1-GE3 available in stock?
This page currently shows 53571 units in stock and 33247 units available for SIB411DK-T1-GE3. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.
Can I request a quote or sample for SIB411DK-T1-GE3?
Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for SIB411DK-T1-GE3 by Vishay. The TrustCompo team can review price, availability, and documentation support.
Is a datasheet available for SIB411DK-T1-GE3?
Yes. This page links to the datasheet for SIB411DK-T1-GE3 by Vishay, so engineers and buyers can review package, ratings, and application details before purchase.
How should buyers verify SIB411DK-T1-GE3 before ordering?
Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for SIB411DK-T1-GE3 before approving the order.
Transistors - FETs, MOSFETs - Single
Recommended Products
Explore more parts from the same subcategory to compare fit, stock, and sourcing options.
IRF840LCPBF
180 purchased
TO-
RoHS
Datasheet
MOSFET N-CH 500V 8A TO-220AB
Reference price
$1.43Add to RFQ list
FDP6030BL
195 purchased
TO-220
RoHS
Datasheet
MOSFET N-CH 30V 40A TO-220
Reference price
$0.40Add to RFQ list
IPB017N08N5ATMA1
208 purchased
TO-263-3
RoHS
Datasheet
MOSFET N-CH 80V 120A D2PAK
Reference price
$36.67Add to RFQ list
IPB108N15N3GATMA1
145 purchased
TO263
RoHS
Datasheet
MOSFET N-CH 150V 83A TO263-3
Reference price
$6.65Add to RFQ list
IRFP9240PBF
179 purchased
TO-
RoHS
Datasheet
MOSFET P-CH 200V 12A TO-247AC
Reference price
$0.91Add to RFQ list
More sourcing insights
Articles
Jul 11, 2026
2026 Q3 Wide-Bandgap Power Read: Where SiC Is Scaling, Where GaN Is Winning, and Why Silicon Still Matters
wide-bandgap semiconductorsSiCGaNpower electronics
A Q3 2026 read on SiC, GaN, and silicon power semiconductors: where wide-bandgap devices are winning now, where silicon still holds, and what engineers and sourcing teams should watch.
Jul 8, 2026
Texas Instruments Lead Time and Price Pressure in 2026: What Analog and Power Buyers Should Do Now
Texas Instrumentsanalog ICpower management IClead time
A buyer-facing framework for Texas Instruments analog and power IC exposure in 2026, covering what is confirmed, where price and lead-time pressure is most likely to show up, and which actions sourcing teams should take first.
Jul 3, 2026
How to Read a Product Change Notification (PCN): TI and Renesas Case Studies
PCNproduct change notificationelectronics procurementTI
Learn how to read a Product Change Notification (PCN), separate PCN vs PDN vs EOL, and decide which supplier changes need tracking, validation, or engineering escalation.