Supply original IXFR180N10, Transistors - FETs, MOSFETs - Single, by IXYS

MOSFET N-CH 100V 165A ISOPLUS247

RoHS
Datasheet
Supply original IXFR180N10, Transistors - FETs, MOSFETs - Single, by IXYS | TrustCompo

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Part Number

IXFR180N10

Internal code

TCE000078326

Package

-

Manufacturer

IXYS

Key specifications

Serise

HiPerFET™

Min Quantity

1

Description

MOSFET N-CH 100V 165A ISOPLUS247

key Attributes

-

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Globally recognized certifications

4 certifications

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ISO 9001

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AS9120B

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ISO 14001

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Product overview

Overview

MOSFET N-CH 100V 165A ISOPLUS247

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Detailed Specifications

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Popular Specs Surfaced First

Product Parameter

Number Of Elements

1

Product Parameter

Turn-Off Delay Time

140 ns

Product Parameter

Dual Supply Voltage

100V

Product Parameter

Rise Time

90ns

Product Parameter

Reverse Recovery Time

250 ns

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Number Of Elements
1
Turn-Off Delay Time
140 ns
Dual Supply Voltage
100V
Rise Time
90ns
Reverse Recovery Time
250 ns
RoHS Status
ROHS3 Compliant
REACH SVHC
No SVHC
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-PSIP-T3
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Part Status
Obsolete
Published
2000
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Nominal Vgs
4 V
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Additional Feature
AVALANCHE RATED
Isolation Voltage
2.5kV
Manufacturer
IXYS
Series
HiPerFET™
Radiation Hardening
No
Pbfree Code
yes
Mount
Through Hole
Pin Count
3
Gate To Source Voltage (Vgs)
20V
Number Of Terminations
3
Voltage - Rated DC
100V
Termination
Through Hole
Drive Voltage (Max Rds On,Min Rds On)
10V
Case Connection
ISOLATED
Drain To Source Breakdown Voltage
100V
Vgs(Th) (Max) @ Id
4V @ 8mA
Power Dissipation
400W
Fall Time (Typ)
65 ns
Drain-Source On Resistance-Max
0.008Ohm
Pulsed Drain Current-Max (IDM)
720A
Avalanche Energy Rating (Eas)
3000 mJ
Number Of Pins
247
Input Capacitance (Ciss) (Max) @ Vds
9400pF @ 25V
Package / Case
ISOPLUS247™
Power Dissipation-Max
400W Tc
Rds On (Max) @ Id, Vgs
8m Ω @ 90A, 10V
Continuous Drain Current (ID)
165A
Current Rating
165A
Gate Charge (Qg) (Max) @ Vgs
400nC @ 10V
Manufacturer'S Part No.
IXFR180N10
Current - Continuous Drain (Id) @ 25°C
165A Tc

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What is IXFR180N10?

IXFR180N10 is a Transistors - FETs, MOSFETs - Single component from IXYS. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IXFR180N10?

IXFR180N10 is listed with package reference -. The current product description is MOSFET N-CH 100V 165A ISOPLUS247, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IXFR180N10 available in stock?

This page currently shows 64321 units in stock and 10596 units available for IXFR180N10. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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Is a datasheet available for IXFR180N10?

Yes. This page links to the datasheet for IXFR180N10 by IXYS, so engineers and buyers can review package, ratings, and application details before purchase.

How should buyers verify IXFR180N10 before ordering?

Buyers should confirm the manufacturer, package, quantity, target price, RoHS or compliance needs, and any Certificate of Conformance or traceability requirements for IXFR180N10 before approving the order.

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