Supply original IRF6662TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 100V 8.3A DIRECTFET

RoHS
Datasheet
Supply original IRF6662TRPBF, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IRF6662TRPBF

Internal code

TCE000078250

Package

-

Key specifications

Serise

HEXFET®

Min Quantity

1

Description

MOSFET N-CH 100V 8.3A DIRECTFET

key Attributes

-

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ISO 14001

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Product overview

Overview

MOSFET N-CH 100V 8.3A DIRECTFET

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Detailed Specifications

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Popular Specs Surfaced First

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

JESD-609 Code

e1

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

Export Classifications & Environmental

JESD-30 Code

R-XBCC-N3

Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
JESD-609 Code
e1
HTSUS
8541.29.0095
ECCN Code
EAR99
JESD-30 Code
R-XBCC-N3
Part Status
Active
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Mounting Type
Surface Mount
Published
2006
Factory Lead Time
12 Weeks
Packaging
Tape & Reel (TR)
Case Connection
DRAIN
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Series
HEXFET®
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Pulsed Drain Current-Max (IDM)
66A
Radiation Hardening
No
Mount
Surface Mount
Gate To Source Voltage (Vgs)
20V
Terminal Position
BOTTOM
Number Of Terminations
3
Voltage - Rated DC
100V
Number Of Pins
7
Drive Voltage (Max Rds On,Min Rds On)
10V
Length
6.35mm
Drain To Source Breakdown Voltage
100V
Resistance
31mOhm
Gate Charge (Qg) (Max) @ Vgs
31nC @ 10V
Continuous Drain Current (ID)
6.6A
Width
5.05mm
Power Dissipation
89W
Avalanche Energy Rating (Eas)
39 mJ
Input Capacitance (Ciss) (Max) @ Vds
1360pF @ 25V
Power Dissipation-Max
2.8W Ta 89W Tc
Vgs(Th) (Max) @ Id
4.9V @ 100μA
Height
506μm
Package / Case
DirectFET™ Isometric MZ
Current Rating
8.3A
Fall Time (Typ)
5.9 ns
Rds On (Max) @ Id, Vgs
22m Ω @ 8.2A, 10V
Manufacturer'S Part No.
IRF6662TRPBF
Current - Continuous Drain (Id) @ 25°C
8.3A Ta 47A Tc
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Turn On Delay Time
11 ns
Number Of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Turn-Off Delay Time
24 ns
Rise Time
7.5ns

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What is IRF6662TRPBF?

IRF6662TRPBF is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IRF6662TRPBF?

IRF6662TRPBF is listed with package reference -. The current product description is MOSFET N-CH 100V 8.3A DIRECTFET, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IRF6662TRPBF available in stock?

This page currently shows 79735 units in stock and 29791 units available for IRF6662TRPBF. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

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