Supply original IPP110N20N3GXKSA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies

MOSFET N-CH 200V 88A TO220-3

RoHS
Datasheet
Supply original IPP110N20N3GXKSA1, Transistors - FETs, MOSFETs - Single, by Infineon Technologies | TrustCompo

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Part Number

IPP110N20N3GXKSA1

Internal code

TCE000078236

Package

TO220

Key specifications

Serise

OptiMOS™

Min Quantity

1

Description

MOSFET N-CH 200V 88A TO220-3

key Attributes

-

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Product overview

Overview

MOSFET N-CH 200V 88A TO220-3

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Export Classifications & Environmental

JESD-609 Code

e3

Export Classifications & Environmental

Moisture Sensitivity Level (MSL)

1 (Unlimited)

Export Classifications & Environmental

RoHS Status

ROHS3 Compliant

Export Classifications & Environmental

HTSUS

8541.29.0095

Export Classifications & Environmental

ECCN Code

EAR99

Product Attribute

Part Status

Active

JESD-609 Code
e3
Moisture Sensitivity Level (MSL)
1 (Unlimited)
RoHS Status
ROHS3 Compliant
HTSUS
8541.29.0095
ECCN Code
EAR99
Part Status
Active
Mounting Type
Through Hole
REACH Status
REACH Unaffected
ECCN
EAR99
Lead Free
Lead Free
Packaging
Tube
Published
2006
Factory Lead Time
13 Weeks
Halogen Free
Halogen Free
Qualification Status
Not Qualified
Operating Temperature
-55°C~175°C TJ
Operating Mode
ENHANCEMENT MODE
Manufacturer
Infineon Technologies
Technology
MOSFET (Metal Oxide)
Max Junction Temperature (Tj)
175°C
FET Type
N-Channel
Sub-Categories
Transistors - FETs, MOSFETs - Single
Vgs (Max)
±20V
Categories
Discrete Semiconductor Products
Transistor Application
SWITCHING
Transistor Element Material
SILICON
JEDEC-95 Code
TO-220AB
Package / Case
TO-220-3
Power Dissipation
300W
Power Dissipation-Max
300W Tc
Pbfree Code
yes
Mount
Through Hole
Number Of Pins
3
Terminal Position
SINGLE
Pin Count
3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Gate To Source Voltage (Vgs)
20V
Reflow Temperature-Max (S)
NOT SPECIFIED
Number Of Terminations
3
Drive Voltage (Max Rds On,Min Rds On)
10V
Drain To Source Breakdown Voltage
200V
Fall Time (Typ)
11 ns
Avalanche Energy Rating (Eas)
560 mJ
Series
OptiMOS™
Gate Charge (Qg) (Max) @ Vgs
87nC @ 10V
Height
20.7mm
Continuous Drain Current (ID)
88A
Current - Continuous Drain (Id) @ 25°C
88A Tc
Vgs(Th) (Max) @ Id
4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds
7100pF @ 100V
Rds On (Max) @ Id, Vgs
11m Ω @ 88A, 10V
Manufacturer'S Part No.
IPP110N20N3GXKSA1
Terminal Finish
Matte Tin (Sn)
Turn On Delay Time
18 ns
Number Of Channels
1
Number Of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Rise Time
26ns
Max Dual Supply Voltage
200V
Turn-Off Delay Time
41 ns

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What is IPP110N20N3GXKSA1?

IPP110N20N3GXKSA1 is a Transistors - FETs, MOSFETs - Single component from Infineon Technologies. This product page summarizes the core sourcing details buyers need before checking price, availability, documentation, or samples.

What package and description are listed for IPP110N20N3GXKSA1?

IPP110N20N3GXKSA1 is listed with package reference TO220. The current product description is MOSFET N-CH 200V 88A TO220-3, and buyers should confirm package, footprint, and electrical details against the datasheet or quotation notes before approval.

Is IPP110N20N3GXKSA1 available in stock?

This page currently shows 13153 units in stock and 13153 units available for IPP110N20N3GXKSA1. Because electronic component availability can change quickly, submit an RFQ to confirm live stock, lead time, and final pricing.

Can I request a quote or sample for IPP110N20N3GXKSA1?

Yes. Use the Quick Quote or Request Sample action on this page to send the quantity and sourcing requirements for IPP110N20N3GXKSA1 by Infineon Technologies. The TrustCompo team can review price, availability, and documentation support.

Is a datasheet available for IPP110N20N3GXKSA1?

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